MBE

The nanometer Ag film is made by MBE on the surface of Si ( lOO ).

采用MBE在Si ( 100 ) 衬底上制备Ag纳米薄膜.

A 32×32 focal plane array detector was successfully demonstrated by using MBE HgCdTe.

用分子束外延HgCdTe薄膜成功地研制出了32×32红外焦平面器件.

Band Edge Quadratic Electro-Optical Effect and Photorefractive Effect of Low Temperature-Growth MBE GaAs

低温分子束外延GaAs薄膜的带边二次电光效应和光折变效应

The paper has discussed three deducing methods for formula of acid-base titration error, through equation of CBE and MBE, equation of PBE, equilibrium relation of solution.

讨论了从CBE和MBE、PBE以及溶液本身平衡出发来推导滴定误差公式的三种不同方法。

Also, the ability, of performing the depth profile slowly allows the near surface of implants and MBE to be accurately portrayed by using Cs~+ and O_2~+ primary ions beam.

如若使用Cs~+和O2~+一次离子束缓慢地进行深度剖析也可以精细地描绘出离子注入及分子束外延表面附近的结构。

MBE Growth of High Quality P Type GaAs Films

分子束外延高性能P型GaAs单晶薄膜

Modified MBE techniques ate presented such as migration-enhanced epitaxy ( MEE), interval growth and temperature switch.

介绍了迁移增强外延（MEE）、间隔生长和温度开关等改进的MBE技术。

Born in1957 in Birmingham, Willard Wigan MBE began his artistic life at a tender age.

英帝国勋章获得者威拉德.维根在1957年出生于伯明翰，他小小年纪就开始了自己的艺术生涯。

He was made an MBE in 1995.

他于1995年获得英帝国勋位。

He had to go to Buckingham Palace to accept an MBE from the Queen.

他必须前往白金汉宫去接受女王授予的“大英帝国勋章”。

He has been made an MBE in the New Year Honours list.

他被列入新年受勋者名册，获授英帝国勋章。

Epitaxial layers of InSb and InAs _ xSb _ ( 1-x ) on ( 111 ) InSb and ( 100 ) GaAs substrate have been grown by MBE technique.

在 ( 111 ) InSb和 ( 100 ) GaAs衬底上,用分子束外延技术生长了InSb和InAs_xSb_ ( 1-x ) 外延层.

A brief introduction to CBE comparing with MBE and MOCVD is presented in this paper.

本文主要通过与MBE和MOCVD的对比,对CBE作了简单的介绍.

At present, MBE and PLD are among very good film-developing technology, but their cost is too high, making it difficult to be pressed to film in a large size.

目前，比较好的成膜技术有分子束外延（MBE）和脉冲激光沉积法（PLD）。但成本太高，不能实现大面积成膜。

Miss Rucker, who had no business experience and left school at 16 with a C in her maths, now employs more than 1,000 workers and was awarded an MBE in 2010 for services to retail.

拉克小姐16岁离开学校，数学成绩只得了C，没有任何从商经验。如今她却管理着超过1000名员工，在2010年以其在零售业的卓越贡献获得英帝国勋章。

The recent research development of Si/ HgCdTe by MBE was reported.

文章报道了Si基碲镉汞分子束外延（MBE）的最新研究进展。

West Ham academy director Tony Carr receives an MBE in the Queen's Birthday List.

西汉姆学院总监卡尔在女王诞辰嘉奖名单中获得了英帝国勋章。

The growth by Molecular beam epitaxy ( MBE) enables the realization and control of atomically flat and chemically abrupt heterointerfaces.

分子束外延（MBE）能够实现原子量级浮动和化学成分突变的异质界面。

High power semiconductor laser stack arrays, grown by MBE have been prepared.

报道了采用MBE外延生长方法制备的叠层阵列CW工作型高功率半导体激光器。

The public will be able to nominate candidates for awards such as the MBE.

公众将可以推荐诸如英帝国勋章之类的奖项的候选人。

fast pitch-refining algorithm in mbe model

MBE语音模型中快速基音细搜索算法的研究

Improved on Pitch Period Calculation Based on MBE Model

基于MBE模型的基音周期估计算法改进

Therefore ALE is also called "digital epitaxy". In comparison with conventional MBE and MOCVD, ALE offers advantages of greater thickness uniformity, fewer surface defects, less edge growth in selective epitaxy and monolayer control in sidewall epitaxy.

与传统的MBE和MOCVD相比，ALE具有生长层厚度更均匀、缺陷密度更低、选择外廷中无边缘生长以及侧壁外延可控制到单原子层等优点。

Performance Comparison of GaAs/ AlGaAs Quantum Well Infrared Photodetectors Grown by MOCVD and MBE

MOCVD与MBE生长GaAs/AlGaAs量子阱材料的红外探测器特性比较

The analysis in situ of surface magneto-optic Kerr effect indicates that the Fe layer gives rise to an about 2ML thick magnetic dead layer at the interface of Fe/ NiO by MBE deposition.

表面磁光克尔效应的原位测试结果表明：通过MBE沉积的Fe原子层在FeNiO界面处产生了约2ML的磁死层；

A method for controlling beam intensity in MBE system by a nude gauge

MBE装置中分子束流的裸规控制法

an improvement in mbe speech model analysis algorithm using b-spline wavelet transform

基于B-样条子波变换的MBE语音模型分析算法改进

MBE does not require the extensive safety precautions , although solid arsenic dopant must be handled carefully.

和化学气相淀积工艺相反, 虽然在操作中对于固体砷还是必须非常小心掌握,但是,分子束外延不需要庞大的安定保险装置.

The algorithm for pitch period search with MBE model is complex in calculation and low flexible.

MBE模型的基音周期搜索算法存在着运算量大,抗噪性能一般等缺点.

Droplet epitaxy is a new MBE growth method for semiconductor materials, but there has been no effective research concerning the influence of patterned substrate on droplet epitaxy until now.

液滴外延生长半导体材料是一种较为新颖的MBE生长技术，而图形衬底对液滴外延的影响到目前为止并没有非常详细的研究结果。