PMOS

Results show that, after radiation, the threshold voltage drift of NMOS transistors is larger than that of PMOS devices, which is different from the experimental results in the Co~ ( 60) radiation environment.

实验结果表明，辐照后，与用Co60作为辐射源辐照所做实验结果明显不同的是，NMOS器件的阈值电压漂移幅度远大于PMOS器件的漂移幅度。

Based on the PMOS bulk-driven technique, an ultra-low voltage operational amplifier is proposed.

基于PMOS衬底驱动技术, 设计实现了超低压运算放大器.

The influence of total dose, irradiation dose rate and gate biased voltage on the stability of radiation dose recording threshold voltage of PMOS dosimeters have been studied at room temperature. The threshold voltage drift trends and amplitude have been observed at different biased condition on gate source.

在室温条件下，研究了辐照偏置、总剂量和剂量率对PMOS剂量计辐照剂量记录-阈电压的稳定性影响，观察了辐照后阈电压在不同栅偏条件下的变化趋势和幅度。

two power amplifier output stage using pmos and nmos transistors by the special design.

两个功率放大器的输出级均采用PMOS和NMOS晶体管特殊设计而成.

The characterization in space-charge region of SiC PMOS structure is analyzed by solving one dimension poisson equation.

用解一维poisson方程的方法分析了SiC PMOS空间电荷区的电特性；

A third-order intermodulation distortion ( IMD3) sinker composed of a PMOS FET and a tuned inductor is proposed for linearization of CMOS cascode LNA in this paper.

该文提出了一种由调谐电感和PMOS管构成的3阶互调失真吸收单元来提高线性度。

And hence, a design strategy to optimize the phase noise of VCO, such as designing high Q inductor, adjusting tail current and sizing the dimensions of nMOS and pMOS, is presented.

在此基础上，提出了优化VCO相位噪声的设计方法：设计高Q值电感；

the resistance part of parts comprises nmos transistor and pmos transistor for metal silicon.

将元件的低电阻部分,包含NMOS晶体管与PMOS晶体管,予以金属硅化.

Based on the PMOS Quasi-floating gate transistors, a fully differential operational amplifier is proposed.

基于准 浮栅 PMOS晶体管, 设计实现了全差分运算放大器.

The effect on threshold voltage VTH of PMOS transistors, caused by BF_2~+ implantation is studied in this paper.

文章研究了BF2~＋注入对PMOS晶体管开启电压的影响。