c-v

On the other hand, the C-V curves moved to the right and the reduction of absolute value of 2D electron gas depletion voltage proved that the Schottky barrier height was elevated when the annealing temperature increased.

C-V特性曲线随退火温度增大向右移动，从二维电子气耗尽电压绝对值减小反映了肖特基势垒的提高。

Study on C-V Characterization of Hafnium Aluminate Gate Dielectric Annealed in N_2 and NH_3

N2和NH3退火对铪铝氧栅介质C-V特性的影响

Forty-eight Cherry Valley ( C . V ) ducks were randomly allotted eight groups, 8 ducks each group.

急性毒性试验樱桃谷肉鸭48只, 随机分为6组, 每组8只.

An approximate expression of non-equilibrium C-V characteristics for ideal MIS structure is presented. C-V and C-V_G characteristic curves are drawn.

给出一种理想MIS结构非平衡C-V特性的近似表示式，并绘出了C S-V S和C-V G特性曲线。

Chan-Vese ( C-V ) model is an excellent model of simplified Mumford-Shah models.

Chan -Vese 模型是一种优秀的简化Mumford-Shah模型.

A New MOS C-V Analysis Technique is Developed in a Standard Parametric Measurement System& To Analysis Invalidation Causation of Parametric for MOST

在标准参数测试系统上开发CV分析功能&用于MOS器件参数失效分析

Correlation between hemoglobin and Zn , Se, and leucocyte amounts and BFA, V _ C , V _ E were significantly positive.

血红蛋白含量与Zn 、 Se呈较强正相关;白细胞总数与BFA 、 VC 、 VE呈 较强正相关.

Measurement of BCCD Channel Potential by Means of High Frequency C-V Method

高频C-V方法测量埋沟电荷耦合器件的沟道电势

Nuclear Information and Resource Service v. Nuclear Regulatory Commission, 918 F .2 d 189, 190 ( D . C . Cir.1990 ).

见“核信息和资源服务诉核监视委员会”[1990年《联邦判例汇编》第918卷第189 、 190页 ( 地区法院巡回法庭 ) ].

New C-V characteristic of Si PN diodes prepared by molecular beam epitaxy

单边分子束外延硅pn结C-V关系的新特点

The MOS structure was prepared with as-grown SiO_xN_y film as the gate dielectric, and its electrical properties such as dielectric content, breakdown field and leakage current were investigated by the C-V method.

利用所制备的SiO xN y薄膜作为栅介质层制作了MOS结构，并研究了SiO xN y薄膜的介电常数、击穿电场强度和泄漏电流等电学特性。

All C . V.'s ( in English ) to be faxed on E-mailed within 10 working days.

请将个人中英文简历于发布日起10个工作日内传真或电邮到所述地址.

State of California v. Watt, 712 F .2 d 584 ( D . C . Cir. 1983 ).

参见“加利福尼亚诉瓦特”[1983年《联邦判例汇编》第2集第712卷第584页 ( 地区法院巡回法庭 ) ].

Moto parts major in Iveco fitting , C . V boot , flasher , Distributor cap, Gasket and so on.

汽配方面主要有白金 、 防尘套 、 闪光器 、 汽缸垫等.

Results show that HfO 2 gate dielectric hold good electrical characteristics.

实验结果显示:HfO2 栅介质电容具有良好的C-V 特性,较低的漏电流和较高的击穿电压.

Screen the stem proliferation medium of Pyrus Pyrifolia C V.

与筛选苹果梨茎段增殖培养基>>相似的文献.

These regulations, however, were held invalid in NRDC, Inc. v. Costle, 568 F .2 d 1369 ( D . C. Cir. 1977 ).

然而这些条例在“自然资源保护委员会诉科斯特尔”[1977年《联邦判例汇编》第2集第568卷第1369页 ( 地区法院巡回法庭 ) ]案中是无效的.

C-V and I-V characteristics of ultrathin metal/ lb insulating films/ semiconductor structure

超薄的金属/LB绝缘膜/半导体结构的C&V和I-V特性

The substrate temperature has great influence on the properties of both the SiO_2 films and the SiO_2/ Si interface. The fixed charge density of the SiO_2-Si system is estimated from the C-V curve, the minimum value is about 1.73 × 10 10 cm-2.

SiO2薄膜中固定氧化物电荷密度受衬底温度影响较大，其最小值可达1.73×1010cm-2。

This design got the dc characteristic and C-V characteristic curve, forecasted the high frequency characteristics, and analyzed the influence of the main parameters driven on the device characteristics deeply.

本设计得到了该器件的直流特性和C-V特性曲线，预测了器件的高频特性，并深入地分析了各重要参数对器件特性的影响。

C-V characteristic of Study on SiGe/ Si pn heterojunction

SiGe/Si异质pn结的反向C-V特性研究

A New Threshold Voltage Model and Research on C-V Property of MFIS Structure

一种MFIS类结构的阈值电压新模型及其C&V特性分析

Study of Variable-Frequency C-V on InGaAsP/ lnP Heterojunction Interface States

InGaAsP/InP异质结界面态的变频C-V研究

The C-V geometric active contour model is based on the theory of partial differential equations. The segmentation result which is globally optimal, continuous edge can be gained by using C-V model, and C-V model which has strongly noise immunity is the effective image segmentation method currently.

而C-V几何主动轮廓模型是基于偏微分方程的图像分割模型，该模型分割图像可以得到全局最优的、连续边缘的分割结果，具有较强的抗噪性，是目前比较有效的图像分割方法。

Now , I just have a few questions about your C . V.

我对你的简历有几个问题.

This contemporary approach is best illustrated by Amalgamated Meat Cutters v. Connally, 337 F. Supp.737 ( D. D . C .1971 ).

这一当代的方法在“多功能切肉机诉康纳利”案[载于《联邦判例补编》第337卷, 第737页 ( 哥伦比亚 特区 地方法院, 1971 ) ]中得到最好的说明.

The Effect of SG on the Compacted Range of Graphite in Thin Section Castings of C/ V Cast Iron

SG对薄壁蠕墨铸铁件蠕化范围的影响用冲天炉生产蠕墨铸铁件的试验

Greta : Is that the same as a resume or c . v.

格丽塔: 这和履历表是同样的东西吗?

Its dark current, C-V, responsivity, and response time are measured at room temperature.

测量了该紫外探测器的暗电流曲线、C V特性曲线、光响应曲线和响应时间曲线。

The density of oxide fixed charge N_f and the density of trapping states N(?) at the interface between the A, laser-recrystallized polycrystalline silicon layer and the underlying oxide layer have been studied by high frequency and quasi-static state C-V technigues.

我们用常规的高频和准静态C-V技术测量了氩离子激光再结晶多晶硅/二氧化硅界面的氧化物固定电荷密度N f和界面态陷阱密度N（it）。