deposition rate

Research on thin film deposition rate deposited by sputtering

溅射镀成膜速率的研究

Deposition rate is increase quickly with sputtering power.

结果表明溅射功率对沉积速率的影响最大,随溅射功率的增大沉积速率快速增大.

The deposition rate and photosensitivity increases while the Xc decreases with the increase of silane concentration.

随着硅烷浓度的增加，沉积速率和光敏性增加而晶化率下降。

The effects of reaction temperature and chloride concentration on the deposition rate of metal are also discussed.

同时还讨论了反应温度和氯化物浓度对金属沉积速度的影响。

The influence of pH value, current density, temperature and agita-tion is studied. Its covering power, throwing power, deposition rate, corrosion resistance, solderability, ther-mal stability, adhesion and hardness are all determined.

研究了pH值，电流密度，温度和搅拌的影响，测定了分散能力、深镀能力，沉积速度，抗蚀性能、焊接性能，耐温性能，结合力和硬度。

The deposition rate, morphologies, breakdown voltage and refractive index were studied.

研究了制备工艺对薄膜沉积速率 、 表面形貌 、 折射率和电击穿场强的影响.

The deposition rate of electroless Ni P was studied by electrochemical analysis.

实验采用电化学分析法研究化学镀镍的沉积速度.

The highest deposition rate was found in WW rats who have active fore metabolism.

骨氟沉积也以骨代谢最活跃的幼年大鼠最高。

On the contrary, deposition rate raise with mole fraction of MTS rising in mixed gas at higher temperature, whole reaction is controlled by mass transmission.

在较高温度下，反应速率随混合气体中MTS含量的增大而增大，总沉积速率受质量传输控制。

An electroless deposition technique on carbon fiber with higher copper deposition rate and stability was presented.

提出了一种有较高沉铜速率和稳定性的碳纤维化学镀技术.

Effects of accelerating agent A 1 on deposition rate and stability of EN soln.

研究了加速剂A1对化学镀镍反应速度、稳定性及镀层耐蚀性的影响.

The results showed that the Thiourea and Sodium acetate anhydrous concentration strongly affects the deposition rate and stability of the solution transformed and the following factors are Sodium hypophosphite, Lactic acid, Lead acetate and Nickel ion concentration in solution subsequently.

实验研究的结果显示，硫脲及无水乙酸钠浓度对转化镀液的沉积速度和稳定性都有显著的影响，影响作用次之的是次亚磷酸钠、乳酸、醋酸铅、镍离子的浓度。

The relationship between the flow rate of Freon ( CCI 2 F 2 ) and deposition rate and efficiency is obtained.

本文研究了不同掺氟量对沉积速率及沉积效率的影响,得出了氟利昂流量与沉积速率及沉积效率之间的变化规律,并试验了沉积温度、热区宽度对 掺氟 的影响.

The results show that when CH_4 is introduced into plasma, the deposition rate and C content of SiC/ C composite film increase, and films with columnar structure are formed.

研究结果表明，向等离子体中导入CH4，SiC/C薄膜沉积速度增大，薄膜中C含量增加，薄膜断面呈现柱状结构。

KW microwave plasma chemical vapor deposition ( MP-CVD) of diamond film setup is developed successfully with a water-cooled stainless steel reaction chamber for large film square and higher deposition rate.

为提高微波等离子体化学气相沉积（MP－CVD）金刚石膜的面积和沉积速率，我们成功研制了5kW水冷不锈钢反应腔式MP－CVD装置。

The dependence of the deposition rate on the laser intesity power has been obtained, at a given temperature, the threshold power is 4 W.

获得沉积速率对激光功率P的依赖关系，在一定的温度条件下，阈值功率为4W。

The effection of dominating processing on deposition rate, adhesion, and residual stress has been revealed.

揭示了主要工艺参数对SiO2和TiO2薄膜的沉积速率、附着力、内应力和透过率的影响规律。

The deposition rate of calcium phosphate in FCS is higher than that in SBF.

快速钙化溶液中磷酸钙层的沉积速度高于模拟体液.

Effect of Surface State after Activation on Deposition Rate of Direct Electroless Nickle Plating on Magnesium Alloy

镁合金直接化学镀镍活化表面状态对镀速的影响

The deposition rate and morphology of Ag deposit are all different in each stage.

在不同的沉积阶段,银晶层的沉积速率和形貌也不同.

Blowing argon decreases deposition rate at appropriate range of argon flowrate.

在吹氩量合适的范围内,吹氩能够降低沉积速率.

The relationships of current density with deposition rate, crystal size and hardness of deposit were studied.

研究了电流密度与沉积速度 、 晶粒尺寸及镀层硬度的关系.

But the deposition rate and quality of a-Si: H was primarily affected by preparation methods.

但是a-Si：H的沉积速率和品质很大程度上受到制备工艺的影响。

Study on Antibiotic Rate limiting Barrier Membrane by Radio frequency Glow Discharge Plasma Deposition

辉光放电等离子体沉积抗菌素控释膜的研究

When the power is too high, ion bombardment effect results in the decrease of thin film deposition rate.

当功率过高时，离子的轰击作用导致薄膜的沉积速率降低。

When pH value < 0.5, faster deposition rate, faster growth rate of crystallizing nucleus, which causes bigger crystalline granularity and bad surface quality of the deposits such as crassitude or darkling.

pH＜0.5时，沉积速度过快，晶核成长速度快，晶粒粒度较大，镀层表面粗糙、发黑，表面质量差。

It is found electron temperature and nano pore structure can change the ion deposition rate effectively.

结果表明电子温度以及纳米孔洞结构能够有效改变离子的沉积率.

The process is stable, and the deposition rate can attain 4.5 mg/ ( cm2 · h).

该工艺稳定，沉积速度可达4.5mg/（cm2·h）。

The deposition rate is dropped as pressure in the reaction chamber is increased.

沉积速率随着反应室工作压力的增加而下降。

High deposition rate of a-Si ∶ H film is observed near by the substrate with high magnetic field gradient.

制备aSi∶H薄膜时，在衬底附近具有高的磁场梯度值可以得到高的沉积速率。