donor doping

The reason of the room-temperature resistivity decreasing distinctly is part of doping Cl element substituting O-site as donor dopant.

室温电阻率大幅降低的原因，是引入的Cl元素有一部分能进入晶格取代O位起施主作用。

Research on Semiconductor Ceramic Materials: Double Donor Doping BaTiO_3

双施主掺杂BaTiO3半导体陶瓷材料的研究

An Anomaly Phenomenon of the Interaction Between Donor Doping and Acceptor Doping in Highly Donor-Doped BaTiO_3 Ceramics

高施主掺杂BaTiO3陶瓷中施、受主杂质相互作用的一种异常现象

Research on Donor Doping of TiO_2-based Varistor Ceramics

TiO2系压敏陶瓷施主掺杂研究

Using liquid-phase donor doping and calcium adding etc method to optimize the formulation, a PTCR material was acquired.

采用液相施主掺杂和添加钙等方法优化配方制成PTCR材料。

The effects of donor doping amount, cooling conditions after sintering and oxidation temperatures on the semiconductivity of SrTiO_3 have been studied.

研究了施主掺杂量，烧成后的冷却条件、氧化温度对SrTiO3半导化的影响。

Effect of Liquid-phase Donor Doping and High Calcium Adding on Performance of PTC Material

液相施主及高钙添加对PTC材料性能的影响

By doping donor element in the film, P-type semiconductor film will be achieved, and this is quite essential for the development of semiconductor materials with P-N junction.

而通过在薄膜中掺杂受主元素，可以获得P型半导体薄膜，从而对于发展具有P-N结结构的半导体材料有重大帮助。

Common donor dopants are Y 3+ and Nb 5+ Usually donor doped content lies in range from o 2 to 0 3 percent Factors influencing on the content are purity of used raw materials, flux for sintering, donor doping process and the others.

常用的施主加入物是Y3＋和Nb5＋，施主掺入量一般控制在x＝0.2%～0.3%为宜。影响施主掺入量的因素有原料纯度、烧结助剂、掺入施主的工艺等。