dopant

The results show that with the increase of the boron dopant density, the potential windows of the electrodes become narrower and the background currents become larger.

结果表明，随着掺硼浓度的增加，电极的电势窗口略微变小，背景电流也随之变大。

Effect of dopant on gas sensitivity of Fe_2O_ 3 nano powders

掺杂对Fe2O3纳米粉体气敏性的影响

Uses: As an activator of phosphor and dopant of garnet.

用途: 用于荧光粉的活化剂和柘榴石的添加剂.

The promotion effect of lanthanide-dopant was briefly discussed.

作者主要讨论了掺杂的镧系元素的促进效应.

Influence of Dopant on the Gas Sensing Property of CdSnO_3

掺杂对CdSnO3气敏性能的影响

A novel method, namely nonuniform dopant concentration fiber, is investigated, with that SBS threshold power of lightwave CATV systems can be increased.

本文研究了光CATV传输系统中提高受激布里渊阈值功率的一种方法&非均匀掺杂光纤法。

The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.

快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。

In addition, the study shows that 1% of Pt dopant nano-TiO2 exhibits the best inhibitory effect on the growth of cyanobacteria.

当Pt掺杂量为1%时，掺Pt纳米TiO2对蓝藻的抑制效果最好。

The results show that the sensitivity of indium oxide doping noble metal to iso-butane is increased, for the dopant can improve the catalytic property of indium oxide;

掺杂碱性金属氧化物MgO和La2O3能够显著提高乙醇的灵敏度，同时使异丁烷的灵敏度有所降低；

The inhibitory effects of nano-TiO_2 and Pt dopant nano-TiO_2 on the growth of Cyanobacteria were studied.

比较研究纳米TiO2和负载Pt纳米TiO2对蓝藻生长抑制的影响。

Based on the above factors, a new type of N-type dopant material is needed to avoid the above shortcomings.

基于上述因素，需研究一种N型掺杂剂材料以避免现有碱金属N型掺杂剂材料的缺点。

Ion beam defect engineering and increased dopant activation in ion implantation

离子束缺陷工程与离子注入激活率的提高

The effect of dopant on gas sensitive properties of α─ fe_2o_3 material

掺杂对α&Fe2O3材料气敏性能的影响

phototonus of chemical and spectral sensitization of agbr emulsions with formate as dopant

甲酸钠掺杂溴化银乳剂的化学增感和光谱增感感光特性

Shallow Silicided Junctions Formed by Dopant Redistribution of As~+ and BF_2~+ Implanted into CoSi_2

CoSi2中As~+和BF2~+注入杂质再分布形成硅化物化浅结性能研究

Growth and characterization of low P dopant concentrations YP_xV_ ( 1-x) O_4 single crystal

低掺磷YP xV（1-x）O4单晶的生长与性能

Dopant distribution in LDD region is getting closer to substrate surface.

LDD区域中的杂质分布越来越靠近衬底表面.

Effects of the Defect and Dopant on in Adsorption on Graphene

缺陷与杂质对In在graphene上吸附影响的研究

The effects of dopant and preparation method on promoting the sensitivity and selectivity, lowering working temperature, and shortening response time and recovery time are discussed.

阐述了掺杂及制备方法对提高气敏材料的灵敏度、选择性以及降低工作温度和缩短响应-恢复时间等方面的影响；

Study on the inhibitory effect of Pt dopant on nano-TiO_2 on growth of Cyanobacteria

载Pt纳米TiO2抑制滇池蓝藻生长的研究

Exact 2-D Analytical Model of Ion Implanted Dopant Redistribution During Annealing

在退火过程中离子注入杂质再分布的二维精确解析模型

In order to study and produce high property spray concrete, measures are taken as following: ( 1) study the high active fine dopant, to increase the strength and cohesiveness of binding material;

采取以下技术措施，研制出高性能喷射混凝土：（1）研制高活性细掺料，提高胶凝材料的强度和粘聚性；

With more and more research available, knowledge on the effects of bismuth begins to change from a deleterious impurity which people tried their best to remove to a beneficial dopant.

随着研究的不断深入，对铋的作用的认识已有所变化，已经从多年前人们一直想方设法除去的有害杂质变成了有益杂质。

The reason of the room-temperature resistivity decreasing distinctly is part of doping Cl element substituting O-site as donor dopant.

室温电阻率大幅降低的原因，是引入的Cl元素有一部分能进入晶格取代O位起施主作用。

when growing silicide electrode, the thick silicide can punch through the shallow source and form ohm contact with body below that has high dopant concentration.

然后生长硅化物电极，厚的硅化物穿透源区浅结与下面高浓度的体区形成欧姆接触。

There are large charge density on the carbon atoms near the dopant, and the effects of p-type dopants are greater than those of n-type ones.

在掺杂剂附近的碳原子上出现较大的电荷密度，且p型比n型掺杂剂的影响更大。

MBE does not require the extensive safety precautions , although solid arsenic dopant must be handled carefully.

和化学气相淀积工艺相反, 虽然在操作中对于固体砷还是必须非常小心掌握,但是,分子束外延不需要庞大的安定保险装置.

electron probe microanalyses and hall effect were used to measure the variations of ge dopant and its related donor and acceptor concentrations.

通过电子探针微区分析和霍尔效应法探测锗杂质及其相关施主和受主浓度的变化。

For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.

对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。

Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in Fig. 9.

砷化三氢的反应是典型的掺杂化学反应，图9显示了该反应的淀积过程。