film gate

The MOS structure was prepared with as-grown SiO_xN_y film as the gate dielectric, and its electrical properties such as dielectric content, breakdown field and leakage current were investigated by the C-V method.

利用所制备的SiO xN y薄膜作为栅介质层制作了MOS结构，并研究了SiO xN y薄膜的介电常数、击穿电场强度和泄漏电流等电学特性。

Influence of Silicon Film Thickness and Back Gate upon Characteristics of Fully Depleted Thin Film SIMOX/ SOI MOSFET's

硅膜厚度和背栅对SIMOX／SOI薄膜全耗尽MOSFET特性影响的研究

Development of a polyimide film capacitive gate FET humidity sensor

聚酰亚胺薄膜电容栅FET湿度传感器的研制

MOS transistors can be made using this kind of SiO2 film as the gate.

以此SiO2薄膜作为栅，成功地制出了MOS场效应晶体管。

The degradation and breakdown of thin gate oxide film are related with the generation of traps in oxide layer.

薄栅氧化层的退化、击穿与氧化层中和界面陷阱的产生相关。

The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N 2O/ NH 3 plasma. Radiation Characteristics of N_2O-Annealed H_2-O_2 Grown Oxide

采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。氮化H2-O2合成薄栅氧抗辐照特性

Preparation and Characteristics of Organic Semiconductor Static Induction Transistor Using Thin Film Al Gate

薄膜铝栅极有机半导体静电感应三极管的试制及动作特性

Fabrication of SnO_2 nano? crystalline? film gate FET gas sensor

SnO2纳米晶薄膜栅FET式气敏元件的研制

This film is based on the story of 1992" s New Dragon Gate Inn, a work by Tsui Hark. Although Tsui denied that it would be a remake, but more of a reimagination, Flying Swords of Dragon Gate in a way builds on past glories.

该片延续了1992年徐克旧作《新龙门客栈》的故事情节，虽然徐克否认该片是重拍经典，但《龙门飞甲》更像是一部建立在过去的辉煌之中的二次创作。

Preparation and Structure of HfSi_xO_y Thin Film for High K Gate Dielectrics

高K栅介质HfSi xO y薄膜的制备工艺与结构分析

We also find that SiN_x, used as the gate-insulator-layer of the bottom gate TFT, can increase ( by about 20%) the crystalline volume factor ( Xc) of μ c-Si thin film deposited thereon.

同时又发现，以sin x为栅绝缘层的底栅TFT，对随后生长的硅基薄膜有促进晶化的作用（约20%）。

On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.

与此同时，制备高质量的栅绝缘层用氮化硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。

The FET gas sensor fabricated with this kind of nanocrystalline film gate is found to be of good selectivity to the ethanol gas at room temperature.

以该薄膜为敏感体采用平面工艺制成的FET式气敏元件在常温下对乙醇蒸汽具有非常好的选择性。

The film is transported continuously past the film gate.

胶片被连续传输通过快门.