high temperature coefficient

The vanadium oxide thin film has high temperature coefficient of resistance at near room temperature which is prepared by ion beam sputtering.

采用离子束溅射法制备了在室温附近具有高TCR氧化钒薄膜。

Preparation of vanadium dioxide thin film with high temperature coefficient of resistance from V_2O_5 powder by ion beam enhanced deposition

用离子束增强沉积从V2O5粉末制备高热电阻温度系数VO2薄膜

Vanadium oxide thin films are widely used in the field of uncooled IR detecting and imaging for its high temperature coefficient of resistance ( TCR).

氧化钒薄膜由于具有高电阻温度系数（TCR），近年来被广泛应用于非制冷红外探测及红外成像领域。

As the detecting material of uncooled infrared detectors, vanadium oxide ( VOX) thin films need high temperature coefficient of resistance ( TCR) and suitable film resistance for using of the device.

氧化钒薄膜作为非制冷红外探测器的热敏材料，要求具有高的电阻温度系数（TCR）与合适的电阻值，以满足器件的应用。

Bolometer performance has been improved by micromachining technology-the preparation and integration of high temperature coefficient of resistance ( TCR) VOx, nitrogen-doped vanadium oxide and gold black of high infrared absorption, respectively.

通过制备具有高电阻温度系数（TCR）的氧化钒薄膜、掺氮氧化钒薄膜和黑金吸收层并利用微加工技术手段分别将它们集成在探测器上，提高了微测辐射热计的性能。