indium

Dectecting little carbon in super pure indium at Chinese and international is still a blank.

超纯铟中微量碳的测定在国内外还是一项空白.

Preparation of Indium Tin Oxide ( ITO ) Powders and High-quality ITO Target.

纳米金属氧化物的微结构控制及其应用性能研究.

Molecular and crystal structure of 18-crown-6 potassium with indium(ⅲ) thiocyanates complex

18-冠-6六硫氰酸根合铟（Ⅲ）酸钾配合物的分子和晶体结构

PPY films were prepared by electro-chemical method onto the indium-tin oxide glass ( ITO ).

以电化方法在ITO 导电玻璃 基体上制备聚合物聚吡咯薄膜.

The possibility of applying Indium Tin Oxide ( ITO) film on automobile front windshield has been analyzed by conducting the thermal shielding and the energy saving experiments.

通过隔热、节能实验，深入分析了ITO薄膜用于汽车前挡风玻璃的可能性。

In the world, about 90 % of indium is recovered from lead and zinc metallurgical industry.

铟是铅锌冶炼副产物之一,世界上约90%的铟是从铅锌冶金工业副产物中回收的.

Objective To estabish a method of AES for determianation of Indium and compounds in workplace air.

研究工作场所环境空气中二甲基甲酰胺、十一烷和丁酮混合物一次吸附、一次分离的定量分析方法.

Indium leaching rate was more than 90 % at optimum conditions.

在适宜的条件下,铟的浸出率达到90%以上.

Indium Phosphide ( InP) has been indispensable to both optical and electronic devices.

磷化铟（InP）已成为光电器件和微电子器件不可或缺的重要半导体材料。

Acceptor-An element, such as boron, indium, and gallium used to create free hole in a semiconductor.

受主 - 一种用来在半导体中形成空穴的元素, 比如硼 、 铟和镓.

A synthesis method of indium tris acetylacetonate is introduced.

报道了乙酰丙酮铟的合成方法。

This indium isotope was created at the same time as the earth.

这种铟同位素与地球产生在同一时代.

Iron, manganese and lead are the major minerals, accompanying silver and indium.

除铁 、 锰、铅外, 伴生有银、铟.

Electrodes are made of a transparent conductor called Indium Tin Oxide ( ITO ).

电极制成的透明导体所谓的铟锡氧化物 ( 伊藤 ).

High-quality transparent Conductive indium oxide films prepared by thermal evaporation

热蒸发制备高质量透明氧化铟导电薄膜

Research on Technological Conditions of Indium Leaching from Hard-zinc Slag

从硬锌渣中湿法浸铟的工艺条件研究

Metal indium is an important rare metal new material.

金属铟是重要的稀有金属新材料.

The optimum determination condition of Indium by flame atomic absorption spectrometry was studied.

试验了火焰原子吸收光谱法测定铟的最佳介质及共存元素干扰情况.

ITO thin films on glass substrates have been prepared by hydrothermal treating a mixed solution of the indium tin chloride and ammonia.

本研究的重点是以铟锡氯化物水溶液为前驱物，氨水为沉淀剂，采用水热法在载玻片衬底上制备了ITO薄膜。

Investigation on calcination process of indium-tin hydroxide composite powder

铟锡氢氧化物的煅烧过程研究

The theory of thermal ionization mass spectrometry has been deeply discussed and the procedures for high-precision measurement of isotopes of lithium, indium and cerium have been established.

该成果对质谱中的热电离理论进行了较深入地讨论，建立了高精度质谱测定锂铟铈同位素的方法。

The optimal conditions for spectrophotometric determination of antimony in crude indium with malachite green were investigated.

该方法已用于粗铟中锑含量的测定,结果满意.

The indium-gallium-tin alloy radiation loop

铟-镓-钖合金辐射回路

Study on preparation indium tin oxide transparent insulation thin film by dip coating

提拉法制备铟锡氧化物透明隔热薄膜的研究

The research of manufacture super thin tin indium oxide powder by co-precipitation method in solution

液相共沉淀法制备氧化铟锡超细粉体材料的研究进展

Vertical gradient freeze ( VGF) technology is a proven technique for growing semiconductors composed of multiple elements that include: gallium, arsenic, indium, and phosphorus.

垂直倾斜结冰技术是被验证为成长半导体多样元素的混合，包括，锗，砷，铟和磷。

Along with the industrial development. the comprehensive recovery of indium is extensive pay attention to.

随着工业的发展, 铟的综合回收得到了广泛重视.

Nucleic acid films were immobilized onto indium-doped tin oxide ( ITO) electrode through layer-by-layer self-assembly using avidin as the first layer and nucleic acid as the second layer, which functioned as the interface of the electrochemical DNA sensor.

采用分子膜层层组装的原理，选用亲合素作为DNA固定的第一层介质膜，第二层核酸膜通过层层静电吸附的方法固定到氧化铟锡（ITO）电极表面，制备出核酸传感器界面。

Antimony and indium doped tin oxide nano-powders were prepared in 1-butyl-2,3-dimethyl imidazole tetraphenyl borate ionic liquid and ethylene glycol, respectively, by the high temperature pyrolysis and solvothermal methods. The powders were characterized using a variety of test methods. 3.

分别采用1-丁基-2,3-二甲基咪唑四苯基硼酸盐离子液体的高温热解法和乙二醇为溶剂的溶剂热法制备得到锑和铟掺杂的氧化锡纳米粉体，采用多种测试方法对粉体进行了表征。

A specific thin-film technology is based on the use of Copper Indium Diselenide ( CIS ) material.

还有一种基于使用铜铟硒化合物 ( CIS ) 材料的特殊薄膜技术.