interface state

In this paper the series resistance for silicon MIS/ IL solar cells related with the thickness of evaporated SiO coating, the fixed positive charge density in the coating and the interface state density has been indicated.

本文讨论了MIS/IL太阳电池的串联电阻与蒸发SiO膜厚度、膜中的固定正电荷密度、界面态密度之间的关系。

The experiment result shows that the holes generated by avalanche can be injected into gate oxide of a NMOSFET biased into snapback, and then both hole trapping and interface state generation can be found.

实验结果发现突发击穿（snapback），偏置下雪崩热空穴注入NMOSFET栅氧化层，产生界面态，同时空穴会陷落在氧化层中。

Influence of Base Plate Thickness on the Interface State of Explosive Composite Material

基板厚度对爆炸复合材料界面状态的影响

Test Case Generation Based on Interface State Cause-Effect Chart

基于界面状态因果图的测试用例生成