ion beam sputtering

The results about the research on the characters of ion beam sputtering show that grid voltage and sputtering gas pressure have great influences on ion beam distribution and current.

溅射特性研究结果表明：屏极电压和溅射气压对离子束均匀性和束流密度影响显著；

The vanadium oxide thin film has high temperature coefficient of resistance at near room temperature which is prepared by ion beam sputtering.

采用离子束溅射法制备了在室温附近具有高TCR氧化钒薄膜。

Photoluminescence of SiN_x Thin Film Prepared by Dual Ion Beam Sputtering

双离子束溅射制备SiN x薄膜的光致发光性质

Depth crystalline evolution property for microcrystalline Si films deposited by ion beam sputtering was studied.

研究了离子束溅射制备微晶硅薄膜的生长纵向结晶演化过程.

A Study of Gas Sensitive Films Fabricated Through Ion Beam Sputtering

离子束溅射生成气敏膜的研究

HfO_2 films were prepared by electron beam ( EB) evaporation, ion assisted deposition ( IAD) and dual ion beam sputtering ( DIBS);

HfO2薄膜利用电子束蒸发（EB）、离子束辅助（IAD）和双束离子束溅射（DIBS）三种方法沉积。

Polycrystalline Vanadium Oxides thin films deposited on Si ( 110) and quartz substrates for thermo-sensitive material of uncooled IR detector arrays were fabricated by ion beam sputtering deposition and oxide process.

采用离子束溅射镀膜和氧化工艺在Si（110）和石英衬底上制备了用于非致冷红外探测器阵列热敏材料的混合相氧化钒多晶薄膜。