In the course of synthesis of TS-1 adding seeds from inorganic titanium and silicon system, the dosage of template ( TPABr) will reduce greatly even to the extent and it will be lower than the limit.

Objective This study was made to observe the topography and ionic diffusion of the elements titanium, silicon, et cetera in the Ti-porcelain interface area which was pretreated with different methods.

目的研究不同表面处理条件下钛瓷界面的形态学特征及钛、硅氧等元素的扩散情况。

It is emphatically expounded the effects of vanadium, titanium, silicon and sulphur on viscosity, melting temperature and solidifying point of liquid iron.

简介了所采用的测试研究方法，着重论述了钛、钒、硅、硫单因素及其综合因素对铁水粘度、熔化性温度和凝固点的影响。

Conductive Property of Recrystallized Graphite Doped with Titanium and Silicon

双组元掺杂钛硅再结晶石墨传导性能的研究

Progress of photocatalysts of composite titanium-silicon oxide

钛硅复合氧化物光催化剂的研究进展

Thin Film Interaction Between Titanium and Silicon

钛硅之间的薄膜反应

Titanium silicon nitride ( Ti-Si-N) nano-composite film is one of the promising hard materials, which has been the focus of the field of hard films due to its excellent mechanical and thermodynamic properties.

纳米复合薄膜钛硅氮（Ti-Si-N），以其优异的机械、热学性能，拥有广泛的应用前景，一直是硬质材料研究领域的热点。

Titanium silicon catalytic materials gives new ways for the studies of the catalytic oxidizing reactions and the exploitation of the environmental benign chemical engineering processes.

钛硅催化材料的发展为研究有机选择氧化反应和开发环境友好化工工艺提供了新途径。

Development of Titanium Silicon Catalytic Materials ⅰ. Preparation of Titania-Silica Mixed Oxides and Its Catalytic Properties

钛硅催化材料的研究进展Ⅰ.钛硅混合氧化物的制备与催化性能

A double-layer polysilicon bipolar technology is presented. Deep-trench isolation and BF_2-implanted base layer, combined with rapid thermal annealing ( RTA), are used in the process for emitter diffusion and titanium silicide annealing.

报道了一种使用深槽隔离和注入基区及快速热退火（RTA），同时为发射极扩散和Ti硅化物退火的双层多晶硅双极技术。

Titanium silicide has received great interests due to its low resistivity, high thermal and chemical stability as well as high compatibility with Si technology.

硅化钛具有低电阻率、较高的热稳定性以及化学稳定性等诸多优异的性能，且由于其可以与硅工艺兼容而具有重要的研究价值。

Raman Scattering of Refractory Metal Titanium Silicide

难熔金属硅化物的喇曼散射

A Self-Aligned MOSFET Technology with As Ion Implantation Into Titanium Silicide

As离子注入硅化钛自对准MOS器件技术研究

The Influence of Gas Mixture Ratio on the Properties of Titanium Silicide Films Formed by PECVD

气体流量比对PECVD硅化钛薄膜性质的影响

In this paper, the titanium silicide films processed by PECVD method have been studied.

本文研究了用PECVD法制备硅化钛膜的卫艺。

Titanium silicide thin film formation by nh_3 plasma asisted thermal annealing

NH3等离子体增强热处理形成硅化钛导电薄膜

Titanium Silicide Formed by Means of Ion Mixing

用离子束混合形成硅化钛

Investigation of phase change and growth kinetics of titanium silicide on silicon

硅上硅化钛相变和生长动力学研究

The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.

硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。

Titanium alloy sheet workpieces are used widely in aviation, aerospace, automobile and marine industries owing to its lightweight, high specific strength, excellent mechanical property in high or low temperature and corrosion resistant.

钛合金钣金件由于轻质、高比强度、高低温力学性能好、耐腐蚀，而被广泛应用于航空航天、汽车、舰船等领域。

The varieties of the microstructure and the surface hardness of the titanium alloys sheet after the deformation are analyzed by the metallography microscope, SEM and the microsclerometer.

并利用金相显微镜、扫描电镜（SEM）和显微硬度计分析了冲击成形后试样组织结构和表层硬度的变化。