Double Gate Cell with Double Injected one-transistor dynamic access structure is proposed. Based on the change of potential, using the floating effect of SOI, it worked on the high injection efficiency and lowly read-out time.

  • 本文提出了双栅双注入单管动态存储单元结构,该结构器件的工作基于势的变化,利用SOI的浮体效应,通过双注入来提高注入效率和减少读取时间。

  • 互联网摘选 2026-07-11 18:42:30

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