studies on photovoltaic effects of cupc/ cds and h_2 pc/ cds heterojunctions

the photovoltaic property of c60pd ( ph2pch2ch2ch2ch2pph2)-gaas electrode at 1 μ m for thickness of c60pd ( ph2pch2ch2ch2ch2pph2) is the best, the photopotential value is up to 212 mv.

当C60Pd（Ph2PCH2CH2CH2CH2PPh2）薄膜厚度为1μm时，光伏效应值最大。

photovoltaic effect of metallophthalocyanine complexes on mpc-gaas semiconductor electrodes

金属酞菁配合物在MPc-GaAs半导体电极上的光伏效应

the devices made of the polymers containing squaric acid unit and blend c60 derivative ( pcbm) have good photovoltaic effect, and prospect for application in solar cells.

主链含方酸的PPV型共聚物与C60衍生物（PCBM）共混后，具有较好的光伏效应，是一类有前景的太阳电池材料。

photovoltaic effect in doped photorefractive linbo_3 crystal

掺杂光折变LiNbO3晶体光伏效应特性

the obtained thin films covered on n-type si to form si/ czts heterojunction shows obvious photovoltaic property under illumination.

用此方法得到的CZTS薄膜与n型Si形成的Si/CZTS异质结在光照下呈现明显的光伏效应。

the electrical and photovoltaic properties of the heterojunction were investigated by measuring current voltage ( j v) and capacitance voltage ( c-v) characteristics.

通过测量其电流电压J V和电容电压C V特性，研究了其光伏效应及电学性能。

study on photovoltaic effects of zn_ ( 1-x) cd_xse/ znse multiple quantum wells

Zn（1-x）Cd xSe/ZnSe多量子阱光伏效应研究

i-v ( current-voltage) characteristics results show that some samples show a significant photovoltaic effect, the photovoltaic energy conversion efficiency of about 0.4% of the solar cell is obtained.

I-V（伏安）特性测试结果表明，部分样品显示出了明显的光伏效应，得到了光电能量转换效率大约0.4%的太阳能电池。

photovoltaic effect of fullerene-doped phthalocyanine complexes of transition: metals on gaas electrode

球烯C（60）掺杂过渡金属酞菁配合物在GaAs电极上的光伏效应

energy and optimal pressure of amplified spontaneous emission and laser oscillation are compared.

本文还对自发辐射放大和激光振荡的能量和最佳气压进行了比较。

silicon carbon nitride ( sicn) is a new wide band-gap semiconductor with excellent optical properties. it has bright prospect in the field of optoelectronic devices.

硅碳氮（SiCN）是一种新型的宽带隙半导体材料，光学特性优良，在光电子器件领域具有非常广阔的应用前景。

compared with other optical amplifiers, soas have many advantages such as the continuous choice of wavelength ( 1.1~ 1.6 μ m), small volume, low power consumption, high speed, integrability in photonic integrated circuits, and low cost potential and so on.

相对于其他光放大器来说，SOA具有波长连续选择（1.1~1.6μm）、体积小、低功耗、高响应速度、易于与其它光电子器件集成等优点，并具有潜在的价格优势。

recently, silicon-based optical interconnection as well as optical computing becomes the research hotspots in the world, especially for the research on both passive and active optoelectronic devices which are based on soi wafer.

近年来，硅基光互连乃至光计算成为世界科技研究热点，尤其是基于绝缘体上硅（SOI）晶片的各种有源、无源光电子器件的研究更是方兴未艾。

various si-based nanocrystalline luminescent materials have potential applications in the optoelectronic devices and all-si optoelectronic integrated technology. to deepen understanding for the luminescent mechanism, the theoretical and experimental studies of the electronic structures on these materials are very important.

各种Si基纳米发光材料在Si基光电子器件及其全Si光电子集成技术中具有潜在的应用前景，从理论和实验上对其电子结构进行研究，有助于我们深化对其发光机制的认识与理解。

as a core optoelectronic components used in ftth, triplexer has a significant and forward-looking value in research.

而作为FTTH系统所用到的一个核心光电子器件，Triplexer的研究有着基础性和前瞻性的意义，具有较大的发展应用潜力和研究价值。

due to its excellent optical and electrical properties, zinc oxide with low-dimensional structure has broad potential application in optoelectronic devices, ultraviolet laser system and many other fields, which attracts wide attention of the researchers.

低维纳米结构的ZnO由于具有优异的光学、电学性质，在光电子器件、紫外激光系统等众多领域具有广阔的潜在应用前景，引起了科研工作者的广泛关注。

polycrystalline zinc oxide ( zno) films are one of very useful materials, and are widely used in piezoelectric device, transparent conducting electrodes, photo-electric device and gas sensors because of their excellent characteristics.

多晶ZnO薄膜是一种多功能宽带隙氧化物半导体薄膜材料，它可以作为透明导电薄膜、压电薄膜、光电子器件、气敏和湿敏器件而具有广泛的应用前景。

graphene& material has broad application prospects in nano-microelectronic devices, optoelectronic devices, spin quantum devices, as well as new composite materials.

Graphene材料在纳米微电子器件、光电子器件、自旋量子器件以及新型复合材料方面有着广泛的应用前景。

the results of all this study provide an experimental basis and theoretical guidance for the development of azo flexible film optoelectronic devices.

本文研究结果为开发柔性AZO薄膜光电子器件提供了实验依据和理论指导。

new fields in photoelectron apparatus are exploited when transparent conducting oxides ( tco) appeared.

透明导电氧化物（TCO）的出现开拓了光电子器件研究的新领域。