(脉冲)宽度调制
Through solving possion equation, the characteristics of short-channel MOSFET device is analyzed in details in the following three aspects: the effect of channel length modulation, the change of threshold voltage and potential barrier decrease between source and channel.
通过求解泊松方程,从沟道长度调制效应、阈值电压变化及源极同沟道间的势垒变化三个方面详细分析了短沟道MOSFET的器件特性。
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