MOS的例句大全

Extreme-pressure ( EP ) properties 、 anti-wear ( AW ) and friction-reducing properties of mono-dispersed micro-spherical MoS _ 2 ( MS-MoS _ 2 )

当MS-MoS _2和 CC -MoS_ 2在LP中 的添加浓度分别为各自的最佳添加量0.25%和0.5% ( 质量分数 ) 、载荷为400N时,其摩擦系数较 纯 LP分别 降低了 46.9% 和6.3%,磨损 体积 分别降低了 52.1% 和12.0%.

N-channel enhancement mode vertical D-MOS transistor.

N沟道增强型垂直D -MOS 晶体管.

It has insulated gate MOS devices and the ability to quickly switch.

它具有MOS器件 栅极绝缘和快速开关的能力.

Wu Kai Sha Station will be the northern terminus of MOS Rail.

乌溪沙站是马铁的北行终点站,位于利安?

At the though I felt in my pocket for the mos.

想到这儿,我不禁伸手摸了摸怀里的馍.

New realization of neural networks is presented by using MOS transistors in current mode domain.

本文提出了采用MOS晶体管 的电流型模拟电子神经网络的新实现.

A low-voltage ferrite driver IC with power MOS transistors is presented.

介绍了一种集成低压铁氧体驱动器和功率MOS管 的单片集成电路.

A modeling methodology for MOS varactor was presented for applications at millimeter-wave frequencies.

提出了应用于毫米波段的MOS变容管的建模方法.

This paper proposes a new technique to automatically generate STACK layout for MOS analog cell circuits.

提出了一种新的MOS模拟单元电路的STACK版图 自动生成方法.

Prof. of Electrical Engineering : Kiss is N-type, the latch-up phenomenon in MOS.

电机教授: 接吻是一种N型金属氧化物半导体间的闭锁(锁存;闩锁;锁上)现象.

Hot-carrier effect is a major reliability failure mechanism of MOS devices and circuits.

热载流子效应是影响MOS器件与电路可靠性的主要因素.

The nanoscaled molybdenum disulfide ( MoS _ 2 ) was prepared by using supersonic jet mill.

本文采用超音速气流粉碎机对二硫化钼 ( MoS2 ) 粉体进行粉碎,从而得到纳米二硫化钼.

Effects of Annealing Ambiences on Electrical Properties for Ge MOS Capacitor

退火气氛对Ge MOS电容电特性的影响

The friction and wear behaviors of the PFW/ PU coatings filled MoS_2 and graphite are dependent on the applied load.

同时，负荷和速度对添加MoS2与石墨的聚四氟蜡/聚氨酯复合涂层的摩擦磨损性能有很大影响。

The Influence of Preparation Processes on Fretting Wear Life of MoS_2 Bonded Solid Lubricating Coating

制备工艺对MoS2粘结固体润滑涂层微动磨损寿命的影响

Development of Bonded Coating of Super Fine Powder MoS_2with Graphite

MoS2超细粉和石墨的粘结涂层的研制

The thesis goes deep into the process, device physical characteristics, manufacturable design and optimization of sub-micron MOS devices. Prepares for the research of system-on-a-chip ( SOC) integrative simulation and optimization in deep sub-micron process.

本课题对亚微米MOS器件工艺、器件物理特性和可制造性设计与优化进行了深入探讨，为深亚微米层次的SOC一体化仿真与优化研究打下基础。

In 1978, Shanghai Meteorological Observatory recommended the MOS method and used in operation. In 1979, Jilin Province using the Model Output from facsimile broadcast developed a regional MOS method.

我国MOS方法起步并不晚，上海台1978年引进MOS方法并投入业务使用，吉林1979年利用传真图的模式输出发展了地方MOS方法，该方法适合广大台站和第三世界应用。

It includes column-shared CTIA, DAC, and dummy pixel for static current reduction. Correction data are transferred by DAC to the gates of MOS transistors, to control the bias voltage.

电路采用多列像素共享容式跨阻放大器（CTIA）和DAC，用补偿暗像元扣除静态电流，校正数据经DAC转换送至MOS管的栅极以控制偏置电流达到温度补偿目的。

Research on Upright Helix Furrowing Opener and Characteristics of Ditching Machine; buried channel mos

立式螺旋开沟器及开沟机整机特性研究埋沟金属氧化物半导体