amorphous silicon的例句大全

This paper deals with the measurement of conductivity and thermoelectric power of amorphous Silicon in the temperature range from 77 ° K to 470 ° K.

本文测量了从77°K到470°K非晶硅的电导率和温差电动势率随温度的变化。

In this paper the practical structure of amorphous silicon thin film transistor-based uncooled infrared detector is considered, two mathematical models to calculate infrared absorptance are described and the optical properties are studied in use of optical admittance matrix method.

针对非晶硅薄膜晶体管室温红外探测器的实际结构，提出了两种计算红外吸收率的数学模型，并结合光学导纳矩阵法研究了它的光学特性。

The design and fabrication of hydrogenated amorphous silicon thin film UV detector

氢化非晶硅薄膜紫外线探测器的设计和制备

At the time, the deal stood out not only for its size but also its embrace of amorphous silicon thin film technology, which had been largely abandoned outside China because of the low ratio at which it converted solar energy into power.

当时，这笔交易令人瞩目的除了规模以外，还有它对非晶硅薄膜技术的拥抱；此前这种技术在中国以外基本上被放弃，因为它将太阳能转化为电力的比率太低。

PLED ( polymer light emitting diode) and a-Si TFT ( amorphous Silicon thin film transistor) technology have made great progress in the past few years. Combination of two technologies is expected to be the mainstream of future flat televisions.

近年来，PLED（聚合物发光二极管）和a-Si TFT（非晶硅薄膜晶体管）技术取得了巨大进展，两者的结合有望成为未来平板电视的主流。

The developing trend of X ray testing technology is to use the amorphous silicon flat panel detector(α Si FPD) instead of film screen images.

基于非晶硅面阵探测器的检测技术代替胶片成像已成为今后射线检测的发展方向。

Amorphous Silicon and Amorphous Silicon Camera Tube

非晶硅和非晶硅靶摄像管

These advantage make PIN amorphous silicon thin film solar cell the most promising solar energy battery in the 21st century.

这些优点使其成为21世纪最有前途的太阳能电池之一。

In this paper, a channel thermal impedance model for amorphous silicon thin film transistor is derived from a system of coupled energy equation, heat flowing equation and boundary conditions.

基于能量方程、热流方程和边界条件，本文推导出非晶硅薄膜晶体管的沟道热阻模型；

Simulation of reaction yield curve and boron depth profiling in amorphous silicon films

核反应产额曲线的模拟与非晶硅薄膜中硼的深度分布研究

For an undoped and slight phosphorus doped hydrogenated amorphous silicon ( a-Si: H) film prepared by activated reactive evaporation, this paper points out the dependence of its photoconductivity on temperature and light intensity.

本文报告了用掺杂和轻度磷掺杂的活性反应蒸发，制备氢化作品硅的稳态光电导对温度及光强的依赖特性。

Effects of I/ p buffer on the efficiency of amorphous silicon-based film solar cells

I/P界面处理对非晶硅基薄膜太阳电池性能的影响

The technical properties of a new generation of X-ray sensitive detectors& amorphous silicon ( a-Si) flat-panel detectors were introduced. The new detectors could be in lieu of the usual image intensifier in X-ray real-time radioscopic ( RTR) system for inspecting welds or castings.

介绍非晶硅（a-Si）平板探测器的技术特性，及其取代常用的图像增强器在焊缝和铸件的工业射线实时成像（RTR）检测中的应用。

The results show that the crystalline volume fraction of films decreases gradually, and films change from microcrystalline silicon to amorphous silicon when diborane gas phase doping percentage to silane increase from 0.1% to 0.75%.

拉曼光谱、扫描电子显微镜、分光光度计和电导率测试结果表明：当掺硼比（B2H6/SiH4）由0.1%增加到0.75%时，硅膜的晶化率逐渐降低，并由微晶向非晶过渡；

The structure, preparation and properties of amorphous silicon ( a-Si) material were de-scribed. The application of a-Si in sensors, such as photodiode, colour sensor, X-ray sensor and stress sensor etc.

叙述了非晶硅半导体的结构、制备方法及特性，介绍了非晶硅在制作光电传感器、色敏传咸器、放射线（X射线等）传感器及应变传感器等方面的应用。

Si-H Bond and Photo-Induced Metastable Defects in a-Si: H Observation of Second Kind of Light-Induced Metastable Defects in Intrinsic Hydrogenated Amorphous Silicon

非晶硅中的硅氢键与光致亚稳缺陷a－Si∶H中第二类亚稳缺陷的观察

Study of the Interface Layer and Stability of Amorphous Silicon Solar Cells

非晶硅太阳电池界面层及稳定性研究

Amorphous Silicon Flat-Panel X-Ray Detector Digital Imaging System

非晶硅X线平板探测器数字影像系统

For anode film, the main attention is paid to the substitutes of lithium metal, such as nitride, oxide of tin metal and amorphous silicon thin-film, in order to gain better cyclic capability.

阳极膜方面以对锂金属替代物的研究为主，比如锡的氮化物、氧化物以及非晶硅膜，研究多集中在循环效能的提高。

Increasing aluminum depositing temperature may make amorphous silicon film crystallize easily annealed at650 ℃.

在650℃的退火温度下增加铝的沉积温度可显著提高非晶硅的晶化效果。