The dual gate oxide ( DGO) technology has been widely used in high-voltage CMOS process, it can integrate both thick gate oxide device and thin gate oxide device in a same chip.
双栅氧工艺(dual gate oxide)在高压CMOS流程中得到了广泛的应用,此项工艺可以把薄栅氧器件和厚栅氧器件集成在同一个芯片上。
A novel dual gate oxide ( DGO) process is proposed to improve the performance of high voltage CMOS ( HVCMOS) devices and the compatibility between thick gate oxide devices and thin gate oxide devices.
提出了一种新的双栅氧(dual gate oxide,DGO)工艺,有效提高了薄栅氧器件与厚栅氧器件的工艺兼容性,同时提高了高低压器件性能的稳定性。
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