Power Semiconductor的例句大全

Characteristics Analysis of GaAs Based High Power Semiconductor Laser and High Brightness LED

GaAs基大功率半导体激光器和高亮度发光二极管特性分析

SOI LDMOS device is a new type power semiconductor device which developed on the basis of LDMOS device.

SOI LDMOS器件是基于LDMOS器件的一种新型功率半导体器件。

A Novel Power Semiconductor Device: RSD and its Applications

新颖的功率半导体器件RSD及其应用

The second is electronic devices of high-performance power semiconductor such as MOSFET and IGBT.

二是正在快速更新的高性能功率半导体MOSFET和IGBT等电力电子器件；

High Power Semiconductor Lasers of New Window on Insulation Film of Al_xN_y

基于Al xN y绝缘介质膜的新型窗口大功率半导体激光器

High power semiconductor laser stack arrays, grown by MBE have been prepared.

报道了采用MBE外延生长方法制备的叠层阵列CW工作型高功率半导体激光器。

Molybdenum is one of important strategic resources, and many important parts such as high-power semiconductor devices radiator and support plates are made of molybdenum plat-es. Its performance directly influences the performance of molybdenum products.

钼是重要的战略资源，而钼板材作为很多重要零件如大功率半导体器件散热器与支撑板原材料，其性能直接影响着钼制品的工作性能。

Simulation on Stable-state Thermal Resistance of Sinks for Power Semiconductor Devices using the ANSYS software

用ANSYS软件包模拟半导体器件散热器稳态热阻

VDMOS is microelectronics and power electronics integrate a new generation of power semiconductor devices.

VDMOS是将微电子技术和电力电子技术融合起来的新一代功率半导体器件。

The coupling-theory-design of the high-power semiconductor lasers SLOT COUPLING PROPERTIES BETWEEN TWO VERTICAL WAVEGUIDES

面阵半导体激光器的耦合理论设计窄-宽面直交波导缝隙耦合特性

High Technique Electric Power Semiconductor Device

高技术电力半导体器件

Thermal impedance of 4.982 × 10~ (-3) K · cm~ 2/ W can fit the need of high power semiconductor laser stacks under the actual drop of operation water pressure.

但在热沉实际工作的水压降条件下，热阻为4.982×10-3K·cm2/W，它能满足高功率激光器叠阵的需要。

The di/ dt Limit Values of Hi-Speed and Hi-Power Semiconductor Switch RSD

高速大功率半导体开关RSD的di/dt耐量极限值

MOCVD Growth of Carbon Doped GaAs/ AlGaAs High Power Semiconductor Lasers

MOCVD生长碳掺杂GaAs/AlGaAs大功率半导体激光器

RSD ( Reserve Switching Dynistor), a new high-power semiconductor device, is a preferred candidate for the switch applied in the pulsed-power apparatus. However, some problems, which confirm to the generation of short-pulse based on RSD, are pressing to solve.

RSD（Reserve Switching Dynistor）是新型的高功率半导体器件，是脉冲功率装置的理想开关元件，但目前制约基于RSD开关窄脉冲发生的一些问题亟待解决。

IGBT is an electronic device in the early eighties, It belongs to a new power semiconductor devices. The characteristic of voltage input is along with the characteristic of low resistance on-state output. It can replace the GTR and power MOSFET devices in many industrial fields.

IGBT最早出现于上世纪八十年代初，被归为新型半导体功率器件，可以在很多工业领域替代GTR和功率MOSFT等器件。

Gate commutated thyristor ( GCT) is a new high power semiconductor devices based on Gate turn-off thyristor ( GTO), GCT has extensive application foreground and it is a blank in interiorly now.

门极换流晶闸管（GCT）是在GTO的基础上开发的一种新型大功率半导体器件，有广阔应用的前景，目前在国内尚属空白。

The Pilot Study Based On Manually Adjustable Angle Solar Power Semiconductor LED Lighting System

手动角度可调式太阳能LED照明系统的试验研究

Review of 2009 the 21~ ( st) IEEE International Symposium of Power Semiconductor Devices and ICs ( 1)

2009年IEEE功率半导体器件及功率集成电路国际会议述评（上）

808 nm High Power Semiconductor Laser Fiber Coupling Module

808nm大功率半导体激光器光纤耦合模块系统