annealed的例句大全

Using the characterizing techniques of micro-Raman scattering, X-ray diffraction and computer simulation, Found that nanoscale silicon particles can be grown in thermally annealed a-Si ∶ H films and the sizes of the formed silicon particles change with the temperature ramp rate in thermal annealing processes.

用喇曼散射、X射线衍射和计算机模拟，发现在非晶硅中所形成的纳米硅颗粒的大小，随着热退火过程中升温速率的变化而变化。

The effect of different annealed process on the property change of the resistance thermostat metal is investigated.

本文研究了不同的退火工艺对电阻系列热双金属性能产生的影响。

Annealed Graphite in High S P White Cast Iron

高硫磷白口铸铁退火石墨的形态

The effect of rolling reduction on the formation of texture in cold rolled and annealed titanium sheet has been in investigated by means of the crystallite orientation distribution function analysis ( CODF).

采用三维晶体学取向分布函数（CODF）分析法研究了工业纯钛板材不同冷轧形变量对织构形成的影响。

Decarburization Control of High-speed Steel Annealed in Bogie hearth Furnace

高速钢在台车式炉中退火脱碳控制

The thermal quenching of PL intensity for samples annealed at 900 ℃ measured at temperatures from 15K to 300K is 30%.

测量温度从15K变化到300K时，样品（900℃，30min退火的GaN：Er）的1540nm处PL温度猝灭为30%。

Studies on sub-t_g annealed polyethylene terephthalate by thermally stimulated current

热释电流法研究聚对苯二甲酸乙二醇酯的Sub-T g存放

The Thermally Stimulated Current ( TSC) spectra of a series of Sub-Tg annealed Polyethylene Terephthalate ( PET) specimens have been measured.

测量了一系列在TT g下存放（Sub-T g存放）后的聚对苯二甲酸乙二酯（PET）薄膜的热释电流谱（TSC）。

Study on C-V Characterization of Hafnium Aluminate Gate Dielectric Annealed in N_2 and NH_3

N2和NH3退火对铪铝氧栅介质C-V特性的影响

This study is mainly the following two parts: 1. ITO films annealed at same annealing time intervals and different annealing temperatures in air by a sol-gel spin coating process.

本文的研究主要有以下两个部分：一、采用溶胶-凝胶旋涂法制备ITO薄膜，并将制得的ITO薄膜在空气中用相同的退火时间间隔和不同的退火温度条件下进行热处理。

Arsenic sulphide films were prepared on the slide glass substrates by spin-coating method, then the samples were annealed for different time and at different temperatures respectively.

利用旋转涂覆法在K9玻璃基片上得到硫化砷玻璃薄膜，并在不同的温度下对薄膜进行不同时间的热处理。

In addition, some specimens are annealed at a high temperature for 500 hrs in order to investigate the effect of thermal aging on wire bond reliability.

另外，为了研究热老化对焊点可靠性的影响，一些样品被放置在恒温炉中储存500小时。

Increasing aluminum depositing temperature may make amorphous silicon film crystallize easily annealed at650 ℃.

在650℃的退火温度下增加铝的沉积温度可显著提高非晶硅的晶化效果。

Small pure silver plate was closely packed in pure titanium powder to make the Ag-Ti diffusion couples. The Ag-Ti diffusion couples were annealed at 980 ℃, 1100 ℃ and 1200 ℃ respectively.

使用纯Ti粉和纯Ag块压制紧密接触的Ag-Ti二元扩散偶，在980℃、1100℃和1200℃温度下分别进行退火处理。

The amorphous structure transformation annealed in vacuum was analyzed with X-Ray diffraction and DSC thermodynamic measurements.

利用真空退火炉对Zr41Ti14Cu12.5Ni10Be22.5非晶合金进行了真空退火实验。并用X-Ray衍射仪、DSC热分析分析了退火后非晶的变化。

After annealed at 360 ℃, the earing rate is less than 3%, which get the lowest anisotropy.

在360℃退火时制耳率3%。具有最低的各向异性。

The VOx film samples annealed at 470 ℃ demonstrate similar ln R-t characteristics under heating-up and cooling period, and are suitable for sensitive element of high performance infrared detectors.

而470℃热处理下的VOx薄膜样品，其升降温阻温特性一致性很好，可用作高灵敏度红外探测器敏感元材料。

Microstructures of the AISI 316 Steel Annealed Under Different Conditions

AISI316钢在不同退火条件下的微观组织结构

The metastable phases of the annealed Pd-Ag-Si alloy film were studied by means of TEM.

利用透射电子显微镜（TEM）对Pd－Ag－Si合金膜的亚稳相进行了研究。

PZT thin film was fabricated on substrate Pt/ Ti/ SiO2/ Si < 100> by sol-gel method, then annealed in temperature of 600 ℃, PZT micro-force sensors were manufactured by MEMS silicon manufacturing processes.

PZT薄膜在基体Pt/Ti/SiO2/Si（100）上用溶胶一凝胶法制备，然后在600℃下退火。PZT微力传感器完全由MEMS体硅加工工艺来实现。