bipolar transistor的例句大全

The high speed insulated gate bipolar transistor ( IGBT) transport model is derived by ambipolar transport theory in this paper.

借助双极传输理论导出了高速绝缘栅双极晶体管（IGBT）传输特性的物理模型。

The study on the theory of the edge crowding effect of emitter current in a bipolar transistor is reviewed.

本文对双极晶体管发射极电流集边效应的理论研究作了回顾。

A New Global Optimization Method of Parameter Estimation in Bipolar Transistor GP Model

晶体管GP模型参数提取中的一种全局寻优算法

Gate turn of-thyristor chopper of static auxiliary system of metro No 1 is replaced by high voltage insulated gate bipolar transistor ( HVIGBT) chopper, which is presented in this article, to realize the home manufacture of static auxiliary system.

阐述了在地铁一号线车辆静止辅助系统中采用高压绝缘栅双极型晶体管（HVIGBT）斩波器替代门极可关断晶闸管（GT0）斩波器，以实现静止辅助系统的国产化。

A class E amplifier can be constructed using either bipolar transistor or MEMS switch.

分析一种基于E类放大器新型逆变拓扑结构，并且详细分析了该电路的特征。

IGBT ( Insulate Gate Bipolar Transistor) enhances the performance index and the energy saving for the entire machine system.

绝缘栅双极晶体管（Insulate Gate Bipolar Transistor，IGBT）作为新型电力电子器件是整机系统提高性能指标和节能指标的首选产品。

The composite insulated Gate Bipolar Transistor model. Gate TurnOff Thyristor model and MOSFET Control Thyristor model are presented as examples of the composite model method, together with simulations and experimental results.

作为应用组合模型原理的实例，文中给出了组合绝缘门根晶体管模型、组合门极可关断晶闸管模型和组合MOSFET控制晶闸管模型，并和实际器件进行比较。

The IGBT full name is Insulate Gate Bipolar Transistor, namely the insulation grid bipolar transistor, it is new semiconductor devices which rapidly develop in recent years.

IGBT的全称是Insulate Gate Bipolar Transistor，即绝缘栅双极晶体管，是近年来迅速发展起来的新型半导体器件。

VSC-HVDC system is a new type of HVDC technology, including voltage sourced converter ( VSC) and insulated gate bipolar transistor ( IGBT).

VSC-HVDC系统是一种基于电压源换流器（VSC）和串联绝缘栅双极晶体管（IGBT）的新型直流输电技术。

A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.

本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。

He ion implantation localized lifetime control SOI lateral insulated gate bipolar transistor ( SOI-LIGBT) is proposed in this paper, which can effectively raise the turn-off speed of devices, which is compatibles with integrated circuit process.

研制出He离子注入局域寿命控制SOI横向绝缘栅双极晶体管（SOI－LIGBT），有效地提高了器件的关断速度，且与集成电路工艺相兼容。

Transient Turn-off Fast Relaxation of Complementary Lateral Insulated-Gate Bipolar Transistor

互补型横向绝缘栅双极晶体管的截止瞬态快速弛豫

Study on the time delay model of the bipolar switching transistor and its loading capability

双极型开关晶体管延时模型和带负载能力研究

transient response of bipolar junction transistor under intense electromagnetic pulse

双极型晶体管在强电磁脉冲作用下的瞬态响应

the utility model relates to a bipolar electrocoagulator which belongs to a medical apparatus. a double tube push-pull principal oscillation circuit is composed of a transistor.

本实用新型涉及双极电凝器，属于医疗仪器，由晶体管构成双管推挽主振电路。

the use of oxide-isolation bipolar process and a feature size of 3 μ m render to the transistor an ft of 3.5 ghz.

采用氧化物隔离双极工艺，最小特征尺寸为3μm，晶体管的f T为3.5GHz。

Failure Causes Analysis due to Heat Stress of Bipolar Microwave Power Transistor

双极型微波功率晶体管热失效原因分析

Temperature Property of Bipolar Static Induction Transistor

双极型静电感应晶体管的温度特性

Bipolar complementary transistor Logic ( CTL ).

双极互补晶体管逻辑 ( CTL ).

Bipolar or conventional transistors are used in manufacturing transistor-transistor logic ( TTL ) and emitter-coupled logic ( ECL ) devices.

二极管或传统的晶体管用于制造晶体管一晶体管逻辑电路 ( TTL ) 和发射极耦合逻辑电路 ( ECL ) 设备.