conduction band的例句大全

The band gap between π band and π~ band, as well as the trap energy decreases with increasing C-C concentration, leading to increase of leakage current due to field-enhanced thermal excitation of trapped electrons into the conduction band.

随着C-C含量的增大，π价带态和π导带态之间的带隙减小，电荷陷阱深度减小，陷阱中的电子在场增强热激发作用下更容易进入导带，导致薄膜漏电流增加。

The highest-energy band containing electrons is called the valence band, and the next higher one is the conduction band.

填有电子而能量最高的能带称为价带，相邻的更高能带称为导带。

The hybridization of conduction band is studied for close-packed compounds by means of LMTO method.

用LMTO能带论方法分析了密堆结构复式格子的导带中角动量杂化情况变化的规律。

These surface electrons can neither move freely through vacuum nor through conduction band of the metal, otherwise different crystal faces would not have different work functions.

这些电子既不能进入真空，也不能在金属导带中自由运动，否则不同晶面便不可能有不同的逸出功。

The effect of different electron traps was different at electron decay in crystals. The shallow electron traps made the elec-tron decay slowly because that they prolonged the relaxation time of electron in conduction band.

在光电子的衰减阶段，不同的电子陷阱所起的作用不同，浅电子陷阱由于延长了光电子在导带的弛豫时间，使光电子的衰减变缓；

The trap energy of the traps at band tails formed by the delocalized π electrons decreases after annealing, leading to the increase of leakage current due to field-enhanced thermal excitation of trapped electrons into the conduction band.

非定域π电子在带尾形成陷阱且陷阱能量在退火后降低，从而使更多陷阱电子在场增强热激发作用下进入导带并引起电流增大。

Electrical Test and Evaluation on the Conduction Band Defects of Hybrid Integrated Circuits

HIC导带缺陷的电学检测与评估

The empty spaces in the conduction band are at too high an energy level to be of use.

导带里的空间则由于能量太高而无法利用。

However doping has no obvious effect on the conduction band tail.

重掺杂还加宽了价带带尾。

The minimum of the conduction band is found at Γ 1 point.

得出了价带位置和能隙宽度，导带的最小点在Γ1。

Due to the quantum effects, the first subband is higher than the conduction band edge.

由于量子束缚效应的存在，第一个子带高于导带底，因此源漏端的势垒高度提高，载流子密度降低，漏电流降低。

The electronic structure of conduction band near Fermi level is changed markedly, especially for Ni.

费米面附近导带的电子结构变化较大；

Empty Spheres Effect on the Structure of Conduction Band of Alkaline-Earth Sulphide SrS

空原子球对SrS导带结构的影响

Photon absorption of conduction band electrons in fused silica

石英玻璃中导带电子的光吸收

Conduction band structure of K 3C 60 single crystal films was studied at temperatures near 200 K.

研究了K3C60单晶薄膜在200K附近的导带结构。

Carriers are transported in the conduction band of the semiconductor to the charge collector.

承运人运输的半导体的导带电荷收集。

The model includes the production of conduction band electrons ( CBE), laser energy deposition and CBE diffusion.

研究了导带电子的扩散对材料中激光能量的沉积、分布、破坏阈值和烧蚀深度的影响。

Photovoltaic studies on the conduction band discontinuity of ZnSe/ GaAs heterojunctions

光生电压谱方法对Znse/GaAs异质结导带偏移的研究

Effective masses at the top of valence band and at the bottom of conduction band were deduced from band structure.

价带顶和导带底的有效质量从计算得到的能带结构中求出。

The valence band maximum is a flat band; whereas the conduction band minimum is a parabolic band.

能带中价带顶是一条平坦的能带，而导带底为具有抛物线形状的能带。