current gain的例句大全

A Research into the Effect of Funnel MCP on the Relationship Between Current Gain and Noise Figure

扩口微通道板对电流增益和噪声因子关系的影响

Then, the key factors of blocking voltages, current gain, frequency response and power loss were analyzed by combining semiconductor physics and semiconductor device physics, together with Junction Termination Technology ( JTT), device design principles.

进而，根据半导体物理及半导体器件设计原则着重分析了影响器件击穿电压、电流增益、频率响应的主要因素，结合结终端技术分析和器件设计要点，设计一种新结构。

Experimental results show that the current gain exhibits a linear relationship with the square root of the stress time, and that the current gain degradation varies with different reverse bias of base-emitter junction.

实验结果表明，电流放大倍数β与退化时间的平方根呈线性关系；不同的反向偏压下，退化的速度也不同。

A Planar Integration SiGe HBT with High Current Gain

一种具有高电流增益的平面集成SiGe HBT

Features: Low VCE ( sat ) , excellent DC current gain characteristics.

特点: 饱和压降低,极好的直流电流增益特性好.

Features: High DC current gain and excellent hFE linearity, low saturation voltage.

特点: 直流电流增益高,放大线性好, 饱和压降低.

For logic devices, the incremental current gain is very important.

对于逻辑器件来说，提高电流增益是非常重要的。

Hence it will have a higher current gain when connected to a more demanding load.

因此，缓冲器在连接到要求比较高的负载时就具有较高的电流增益。

Temperature Dependence of the Current Gain and the Nonideal Component of Base Current in Microwave Transistors

微波晶体管电流增益和基极电流非理想因子的温度特性

However, AC current gain degrade slowly.

而交流电流增益退化缓慢。

Characteristics of Current Gain With Forward Drop and Turn off Time on IGBT

电流增益与IGBT的开通及关断特性

Purpose: Applications requiring extremely high current gain device designed.

用途: 适用于要求极高电流增益的设备.

All the coefficients of the filter can be independently tuned through the variable current gain factors of the DOCC ⅱ.

滤波器的参数可以通过DOCCⅡ的可变电流增益因子独立调谐。

Features: Low VCE ( sat ) , excellent DC current gain characteristics , wide SOA.

特点: 饱和压降低, 极好的直流电流特性, 宽阔的安全工作区.

A planar integration SiGe HBT with polysilicon emitter is fabricated, which has a current gain greater than 1 500 at room temperature and even up to 2 800 at its maximum.

研制了一种平面集成多晶发射极SiGe HBT。经测量，在室温下电流增益β大于1500，最大达到2800，其Vceo为5V，厄利（Early）电压VA大于10V，βVA乘积达到15000以上。

Features: High DC current gain, low saturation voltage, high col lector power dissipation.

特点: 高直流电增益, 饱和压降低, 高集电极耗散功率.

Additionally, current gain depends on the silicon surface cleaning condition before polysilicon deposition.

电流增益依赖于淀积多晶硅前的表面处理条件。

Relations of current gain with neutron doses were shown.

给出了这些晶体管电流增益与中子注量的关系；

A Method of Current Gain Analysis of Magnetic Amplifiers

磁放大器的电流放大倍数分析方法

A new current gain expression for polysilicon emitter transistor was derived and the experimental result was showed.

导出多晶硅发射极晶体管电流增益的表达式，很好地解释了实验结果。