diodes的例句大全

Development of Temperature sensitive Silicon Diodes

硅温敏二极管研制

According to the simulation results, combined with the actual process conditions, this paper developed a junction termination field limiting ring protected the high pressure Mo/ 4H-SiC Schottky barrier diodes based on experimental results indicate that such planar junction terminal protection structure is very effective.

根据实验结果，结合实际工艺条件，本文研制了具有结终端场限环保护的高压Mo/4H-SiC肖特基势垒二极管，根据实验结果指出此种平面结终端保护结构是很有效的。

The method using high-efficient and high-power H bridge driving circuit DRV592 as a driver in thermoelectric cooler to form thermostat cooler system for high-power laser diodes is presented.

介绍了利用高效、大功率H桥驱动集成块DRV592作为热电致冷器的驱动器构成大功率激光二极管恒温致冷系统的方法。

Organic thin film electroluminescence polymer light emitting diodes with heterojunction

具有异质结的聚合物有机薄膜电致发光器件

A Three-phase Rectifier Bridge Switch Module Based on Fast Recovery Epitaxial Diodes

二极管整流放大伏特计三相超快恢复二极管整流桥开关模块

Threshold Analysis of Two Electrodes DFB Diodes

双电极DFB激光器阈值特性分析

Using transfer matrix method with rate equations and couple wave theory, We present threshold analysis of two electrodes DFB diodes. With collateral arithmetic, we present several modes characteristics in threshold conditions.

用传输矩阵法分析了双电极DFB激光器的阈值特性，在分析中我们运用了速率方程理论结合耦合模理论，用并行算法给出了各个模的阈值特性。

Using rates equations and couple wave equations, we present the threshold analysis of DFB diodes on random facet phases, with multimode differences, we discuss the influence on the diodes as well.

应用速率方程及耦合波方程对半导体DFB激光器的边界相位对器件的阈值特性影响进行了分析，并就各模式之间的差异讨论了其对器件的影响。

The laser feedback interference in λ/ 4 phase-shifted index-coupled and gain-coupled Distribute Feedback laser diodes is analyzed. The threshold gain and oscillation frequency variation in DFB laser diode are theoretically deduced, and present the expression of complex feedback sensitivity.

分析了λ/4相移折射率耦合型及增益耦合型分布反馈激光器的自混合干涉效应，推导出分布反馈激光器的增益及频率的变化，并给出复反馈灵敏度系数表达式。

Emeraldine Base form of Polyaniline in Organic Light Emitting Diodes as Hole-transport Materials

聚苯胺在聚合物发光二极管中的空穴传输作用

Experimental study on the timing jitter of gain-switched laser diodes with photon injection

增益开关半导体激光器在外光注入下脉冲抖动的实验研究

The progress of organic electroluminescence ( EL) is summarized. Emphasis is given to recent developments for a dot matrix display using organic light emitting diodes.

本文综述了有机电致发光板（EL）的进展，并着重介绍了用有机发光二极管（O－LED）研制点矩阵显示器的近况。

In this paper a novel structure of SiGe power switching diodes is presented. On the basis of analyzing the structure mechanism, we simulated the device characteristics using Medici and carried out the optimal design.

提出了一种新型SiGe/Si异质结PiN开关功率二极管结构，在分析器件结构机理的基础上，用Medici模拟了该器件的特性。

A capacitor ( 123) is electrically connected with diodes ( 124,125) and field winding ( 122) of field magnet and armature.

电容器（123）电气联接到二极管（124125）以及场磁体和转子的场线圈（122）。

For the modification of cathode, white polymer light-emitting diodes ( WPLEDs) with bilayer structure were fabricated by spin coating method using different solubility of polymers.

在阴极修饰方面，我们利用聚合物的不同溶解性，研究了用旋涂方法制备双层高分子白光二极管（WPLED）。

X-ray diodes and Dante spectrometer were used to measure X-ray flux and radiation temperature in the slit, the source and the transport end, respectively.

用XRD和Dante谱仪分别得到缝口、源和输运末端X光辐射总量和辐射温度。

study of linear laser diodes side-pumped nd ∶ yag laser with diffusive cavity

大功率线阵激光二极管侧面抽运Nd∶YAG激光器特性研究

Theory on Geometrical Structure and Electronic Configuration of Electroplex at the TPD/ PBD Interface in Organic Light-emitting Diodes

TPD/PBD界面电致激基复合物几何结构和电子结构的理论

ZnO-based semiconductor optoelectronic devices include ultraviolet detector, light emitting diodes ( LEDs) and laser diodes ( LDs), etc.

氧化锌基半导体光电器件主要包括紫外探测器、发光二极管（LED）和半导体激光器（LD）等。

GaN has very promising potential for short-wave length light-emitting diodes, semiconductor lasers, and optical detectors.

GaN基半导体在短波长发光二极管、激光器和紫外探测器以及高温微电子器件等方面显示出广阔的应用前景，已成为人们研究的热点。