junction barrier的例句大全

An analysis of the operation principle of the junction barrier controlled Schottky rectifier is made, and the device characteristics versus structural parameters is discussed in detail.

本文在分析结势垒控制肖特基整流管工作原理的基础上，详细讨论了器件特性与结构参数的关系；

Test and Data Processing of Emitter Junction Barrier Capacitance C Te of Transistor

晶体管发射极势垒电容C（Te）的测试及数据处理

The Si-Based Double Barrier Tunneling Light Emitting Junction

硅基双势垒金属-绝缘层-金属-绝缘层-半导体隧道发光结

We have developed a method that uses a magnetic double barrier tunnel junction to study spin flip scattering in nanometer sized spacer layers near the ballistic limit.

文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法。

objective to investigate the effect of bradykinin ( bk) on tight junction ( tj) of the blood-tumor barrier ( btb) and interendothelial tj of capillaries in brain glioma rats.

目的研究缓激肽（BK）对脑胶质瘤大鼠血肿瘤屏障紧密连接的影响。

The Optimization of the Varactor Model Anomalous Chang in P~+ N Junction's Forward Barrier Capacitance

P~+-N结正向势垒电容异常变化变容管模型的最佳化

This paper presents a capacitance method which is based on that the resistivity of the material with uniform doping has an one-to one correspondence relation to the barrier capacitance when a junction at fixed biasing voltage is formed.

本文介绍一种基于固定偏压下，均匀掺杂材料的电阻率与其形成结时的势垒电容相对应的电容测量法。

The optimum numerical solution of the varactor model "anomalous change in P+-N junction's forward barrier capacitance" has been presented with CAD.

用计算机辅助设计，给出P~+-N结正向势垒电容异常变化的变容管模型的最佳值解。

Study on the Dy-doped Double-barrier Thin Film Light Emission Tunneling Junction

掺稀土Dy的双势垒薄膜结构隧道发光结的研究

According to the simulation results, combined with the actual process conditions, this paper developed a junction termination field limiting ring protected the high pressure Mo/ 4H-SiC Schottky barrier diodes based on experimental results indicate that such planar junction terminal protection structure is very effective.

根据实验结果，结合实际工艺条件，本文研制了具有结终端场限环保护的高压Mo/4H-SiC肖特基势垒二极管，根据实验结果指出此种平面结终端保护结构是很有效的。

The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed.

讨论了硅基双势垒金属绝缘层金属绝缘层半导体(MIMIS)隧道发光结的结构 、 制备方法及发光特性.

Discontinuities of the slope of the curve at the flat form of Coulomb staircase compared to double barrier tunnel junction system, which is caused by the change of the electron numbers on the second Coulomb island, are found.

发现其有别于双势垒隧穿结的情况，在传统库仑台阶的平台处曲线存在波纹状结构，分析得出这是由于第二个库仑岛上的电子数变化对IV曲线的影响。