micron的例句大全

: Shape memory mechanisms charac teristic of Fe-based alloys are discussed based on the microscopic observations with various scales ranging from micron-meter to sub-nanometer.

通过对铁基形状记忆合金从微米到亚纳米尺度的显微观察，讨论了铁基合金形状记忆效应的机制和特性。

Test the precise X-Y of the terrace the work to the conduct and actions the set preceded the point designs, putting forward the project that error margin compensate. Make the principle error margin of the diagraph method as low as the degree of the micron class.

对作为测试平台的精密X-Y工作台进行了重点设计，提出了误差补偿的方案，使测量方法的原理误差降低到微米级的程度。

Hardness measurements identified that the relationship between the yield strength ( one-third of hardness) which increased with decrease of layer thickness for Cu/ Ni multilayers and single layer thickness at sub-micron length scale& could be described by the Hall-Petch ( H-P) formula for dislocation pile-up.

结果表明，当膜厚在亚微米范围内时，Cu/Ni多层膜的屈服强度（为硬度值的1/3）与单层膜厚之间符合基于位错塞积模型的Hall-Petch（H-P）关系式；

Micron Size MOSFET's Analytic Model of Threshold Voltage Used to Circuit Simulation

实用于电路模拟的微米级MOSFET开启电压解析模型的研究

Alpha-200 superficial figure instrument was used to measure the glass base film thickness, and found about 1 micron.

使用Alpha&200表面轮廓仪测玻璃基体表面薄膜厚度，测得薄膜厚度在1μm左右。

The DSC and TEM study on age-hardening behavior indicates that due to the addition of sub-micron Al2O3 particles, the formation of "G.P" regions is suppressed and the thermal diffusion activation energy of S phase is increased.

利用DSC和TEM对时效过程的综合分析表明，亚微米Al2O3颗粒加入抑制了G.P。

Silicon nanowires and silicon micron whiskers have been prepared by thermal evaporation at different ambient pressures.

用物理热蒸发法在不同环境压力下制备硅纳米线和硅微米晶须。

High-frequency plasma ( HFP) as a high power and pure thermal source is used for producing ultra fine powder of sub-micron ZrO 2 and nano-meter ZnO by means of heat decomposition-condensation under high temperature in gas phase.

以高频等离子体（HFP）为高能、纯净热源，采用高温离解&气相冷凝沉积新工艺制备出亚微米级ZrO2及纳米级ZnO等超细粉体材料。

With the development of deep sub-micron and nanometer CMOS process, it is possible to design and implement millimeter-wave CMOS integrated circuits with low cost.

随着深亚微米和纳米CMOS工艺的成熟，设计和实现低成本的毫米波CMOS集成电路已成为可能。

The Induce of Releasing Bone Resorptive Cytokines by Micron-sized Wear Particles from Artificial Joint

微小人工关节磨损颗粒诱导骨吸收性细胞因子的释放

An electrostatic type dust accelerator is used to make aluminum powders of the micron order impact k8 optical glass with a low speed, and make the glass surface adsorb a mass of dust particles.

文章介绍了采用静电式粉尘加速器使微米级铝粉末低速撞击K8光学玻璃，在玻璃表面吸附大量的粉尘粒子。

Alignment technique& focusing detection technique of an sub-micron FIB system

亚微米聚焦离子束系统的合轴技术及聚焦检测技术

In this dissertation, a high sensitivity, high spatial resolution micron moire method and its correlative techniques of ultrahigh frequency grating fabrication and digital image processing are presented.

本文提出并实现了在测量灵敏度、空间分辨率等方面均满足细微观力学实验测量要求的微米云纹方法以及相关的超高频精确制栅与条纹图像的数字化分析处理技术。

In this paper by the low temperature electroless plating with ultrasonic wave vibration reinforcement, the cobalt film was coated on the surface of the micron and sub-micron ceramic particles like Al_2O_3, TiC and WC, respectively.

本文采用低温超声波化学镀的方法，在微米和亚微米级的Al2O3、TiC和WC陶瓷粉体上均匀包覆延性金属Co层，成功制备出以下三类金属。

on the other hand, soi ( silicon-on-insulator) is becoming mainstream technology in sub-micron semiconductor technology due to its completely dielectric isolation and ideal sub-threshold slope, as well as low power-consumption.

另一方面，由于SOI（Silicon-on-Insulator）技术具有更好的隔离性能、理想的亚阈值特性和较低的功率消耗等特点，日益成为半导体行业发展的主流技术。

LOCOS is the mature technology, which is used widely for the isolation in semiconductor micron times.

硅的局域氧化工艺是一个非常成熟的工艺，在微米时代有着广泛的应用。

RESULT Four kinds of realgar granules of micron or nanometer dimension were obtained.

结果制得4种微米、纳米级的雄黄颗粒。

In addition to the X-rays observed with Chandra, other data critical for this result came from NASA's Spitzer Space Telescope and the ground-based, infrared Two Micron All Sky Survey.

除了钱德拉望远镜观测到的X射线辐射之外，这项结果所需的其他关键数据来自NASA的斯必泽太空望远镜以及地面的2微米红外全天巡天。

The thickness of the transducer membrane is in micron scale, so we should use theory of strain gradient to evaluate the static deformation.

换能器厚度达到了微米级别，在研究薄膜应变时要应用应变梯度理论。

Peak-valley value and RMS value of the measured compact disk substrate flatness are 7.88-micron and 2.0-micron, respectively.

所测光盘基片平整度的峰谷值为7.88mm，均方根值为2.0mm。