mos的例句大全

2240 bits MOS ROM is used as character generator.

2240位MOS ROM用作字符发生器。

Transformation of MoS_2 during sintering process of space docking friction material

MoS2在空间对接摩擦材料烧结过程中的行为变化

Characteristics Analysis and Computer Simulation of Optically Triggered MOS-Gate Solid-State Relay

光控MOS栅固态继电器的电路分析与模拟

Optically triggered MOS gated solid state relay is a new switching device, which is composed of an MOS gated thyristor, a phototransistor, an enhanced mode MOSFET and a Zener diode.

光控MOS栅固态继电器是由MOS栅控晶闸管、开关三极管、光电耦合器、增强型MOSFET和齐纳二极管组成的新型开关器件。

A rail-to-rail input range transconductor implemented by MOS transistors linear region characters is presented.

介绍了一种利用MOS管线性区特性实现满摆幅输入的跨导器。

Tribological Behavior of MoS 2 Nanoparticle LB Films on Different Metal Substrate

不同金属基体上MoS2纳米微粒LB膜摩擦学行为研究

Analysis for Analytic Model of the Threshold Voltage of TF SOI MOS Devices

薄膜SOI MOS器件阈值电压的解析模型分析

Simplified analysis for TE mode Optical characteristics of five-layer MOS optical waveguides

五层MOS光波导TE模光学特性的简化分析

The thin film thickness of SOI Groove gate MOS devices affects the threshold voltage, sub-threshold slope and saturation driving current severely. So, it's a very important factor for good device characteristics to optimize the thin film thickness.

仿真结果显示硅膜厚度对SOI槽栅MOS器件的阈值电压、亚阈值特性和饱和驱动能力都有较大影响，选择最佳的硅膜厚度是获得较好的器件特性的重要因素。

Effects of Bio MOS Complex on Prevention and Treatment of Coliform Scours in Piglets

Bio-MOS复合剂对仔猪大肠杆菌性下痢的防治

( 100) N/ N~+ Epitaxial Slice of Silicon for MOS

MOS用（100）N/N~+硅外延片

The Effect of Oxidizer CrO 3 on the Lubrication Performance of MoS 2

氧化剂CrO3在MoS2润滑膜中的物理化学作用

High-temperature wear mechanism of Ni-based alloy containing MoS_2

含MoS2镍基合金高温磨损机理

Design of Low Voltage Four quadrant Analogue Multiplier Using Neuron MOS Transistor

采用神经MOS晶体管的低压四象限模拟乘法器的设计

Therefore, this paper explored to use the finite element analysis tool ANSYS to research stress and strain distributions and influencing factors for a uniaxial strained Si MOS device with typical SiGe source-drain structure and a biaxial strained Si MOS device with strained Si/ SiGe heterostructure, respectively.

本文探索了运用有限元分析工具ANSYS研究具有典型SiGe源漏结构的单轴应变硅MOS器件和应变Si/SiGe结构的双轴应变硅MOS器件的应力应变分布情况和影响因素。

In this paper, we present our results of study of TSIC ( Thermally Stimulated Ionic Current) Spectra in MOS structures.

本文报导对MOS结构热激离子电流谱（简称TSIC谱）的研究结果。

The effects of gate oxide thickness on radiation damage in MOS system

MOS辐射损伤的栅氧化层厚度效应

Effect of Interface Roughness on the Direct Tunneling Current in Ultrathin MOS Structures

粗糙界面对超薄栅MOS结构的直接隧穿电流的影响

With 8 wafers per batch, the etching uniformities on a wafer and of wafer-to-wafer are below ± 5%, At present, this technology has been used in our development and manufacture of silicon gate MOS ICs.

每批8个3吋园片，其单片和片间均匀性可达±5%以下。目前我们已将该技术用于所有的硅栅MOS电路的研制之中。

Electric instantaneous or storage water-heater and immersion heater ion-implanted MOS circuit

电子瞬时热水器或蓄热器及浸入式加热器离子注入金属氧化物半导体电路