on-state的例句大全

In this paper, the on-state impedance matching formulation of MEMS switches is developed based on the results of the high-frequency transmission line, and the electromagnetic characteristics of MEMS switches are confirmed by using the HFSS software.

本文在高频传输线研究的基础上，推导出微机械开关的开态阻抗匹配模型，并利用HFSS软件对开关的高频特性进行模拟。

Because of its high input impedance, low loss, fast switching speed, low on-state voltage drop-out and large on-state current, IGBT has become the mainstream product in the field of power components and been used in numerous fields.

因为输入阻抗高、损耗低、开关速度快、通态压降低，通态电流大等优点成为现今功率器件发展的主流产品，广泛应用于各个领域。

An ideal power device is designed to support a very high voltage in the off-state, possess a very small voltage drop in the on-state, support a very high current density, and be capable of switching at a very high speed.

一个理想的功率器件，希望其在关断时具有非常高的耐压能力，在通态时具有较低的正向压降；不仅能够承受非常大的电流密度，还具有较高的开关速度。

IGBT is an electronic device in the early eighties, It belongs to a new power semiconductor devices. The characteristic of voltage input is along with the characteristic of low resistance on-state output. It can replace the GTR and power MOSFET devices in many industrial fields.

IGBT最早出现于上世纪八十年代初，被归为新型半导体功率器件，可以在很多工业领域替代GTR和功率MOSFT等器件。

It is demonstrated by numerical simulation that the trade-off is superior to the devices using unlocalized lifetime control, the forward on-state voltage can be reduced by 0.6-1.4 V at the same turn-off speed, and it can avoid the snap-back phenomena of anode-short structure.

数值模拟表明，该器件的t f～V F折衷关系优于采用非局域寿命控制的器件，在相同关断速度下其正向压降可降低0.6～1.4V，避免了阳极短路结构的正向快速返回现象。

Improvement on the On-state Characteristics of Fast Thyristor by Using Open-tube Ga-diffusion

开管镓扩散技术改善快速晶闸管通态特性

On-state voltage characteristics curve of TRIAC are given based on the experimental findings, and analysis of the curve.

根据实验数据给出了双向晶闸管（TRIAC）的通态电压特性曲线。

Analyses on Turn-Off Time and On-State Voltage Drop of a New Type of Thin Emitter Thyristors with Low Loss and High Speed

新型低损耗快速薄发射极晶闸管关断时间和通态压降的分析

This Vth model is derived by the second-derivative method and is based on the ON-state drain current model of poly-Si TFTs.

该阈值电压模型是在多晶硅TFT开态电流模型的基础上，利用二次微分法推导得到的。