optoelectronic device的例句大全

organic optoelectronic device with switchable character

新型有机光电开关器件

measurement system for optoelectronic device

光电器件特性测量系统

optical thin film plays an important role in modern optics. without the optical thin film, there are no many complex high performance optical instruments, optoelectronic device and optical system.

现代光学工程中，光学薄膜具有重要地位，可以说，没有光学薄膜，就没有当今许多复杂的高性能的光学仪器、光电子器件以及各种光电系统。

Design of novel absorptive thin film for laser welding in optoelectronic device capsulation

光电子封装中新型激光焊接吸收薄膜的设计

ZnO is a new type of short-wavelength light emitting device material, and the key to make use of the ZnO-based optoelectronic devices is to prepare n-type and p-type ZnO films with the excellent properties.

特别是在光电领域，ZnO是一种新型的短波长发光器件半导体材料，制备可控的n型和p型ZnO晶体薄膜是实现ZnO基光电器件应用的关键。

The Progress of R& D on Information Optoelectronic Device and Technology in China

我国信息光电子器件与技术研究开发的若干进展

By combining the three terminal negative resistance devices and silicon photo detectors, the author of this paper has proposed and composed a novel category of optoelectronic devices& silicon photo negative resistance device successfully.

将三端负阻器件与硅光电探测器相结合，通过新的构思成功地提出并构成了一类新型光电器件&硅光电负阻器件。

the invention further relates to the use of the optoelectronic device and to a method for producing the same.

本发明还涉及光电子器件的用途以及生产它的方法。

experimental investigation of the optoelectronic device'spectral response characteristic

光电器件光谱响应特性的实验研究

laser micromachining for optoelectronic device fabrication

光电器件制造中的激光微加工

developments of cryocoolers for optoelectronic device application

制冷器在光电器件中应用的发展概况

nano-silicon structure has many optoelectronic characteristics differ from bulk silicon due to its quantum confinement effect. it show extensive application prospect in light-emitting device, light-detector, optoelectronic integrated device, and sensor.

硅纳米结构由于量子限制效应有许多不同于体硅的光学及光电性能，它在发光器件、光探测器件、光电集成器件以及传感器等领域有广阔的应用前景。

The optoelectronic integrated circuit ( OEIC) is a new device which combined semiconductor-photoelectric devices and other devices on the same chips or underlays. In the last 10 years, the research of OEIC focused mainly on optoelectronic receiver.

光电集成电路是一类将半导体光电子器件和电子器件集成在同一芯片或衬底上的新型光电子器件，在过去的十年中，光电集成电路（OEIC）的研究集中在光接收机。

to improve a scanning microscope , a new optoelectronic scanning method and device is proposed.

为改进扫描显微镜，提出了一个新的光电扫描方法与装置。

due to the excellent properties of chemical stability, high temperature resistance and corrosion resistance, gan semiconductor materials is suitable to the manufacturing of the device of optoelectronic ( blue, green and ultraviolet light, etc), anti-radiation, high-frequency and high-power.

氮化镓（GaN）半导体材料因其具有化学性质稳定、耐高温、抗腐蚀等优良特性，使其非常适合于制作光电（蓝光、绿光和紫外光等）、抗辐射、高频及大功率的电子器件。

Silicon carbide ( SiC), which has large band gaps, high critical breakdown field strength, high electron mobility and good thermal conductivity, is considered as an ideal material to manufacture the optoelectronic integrated device with high temperature, high frequency, high power and radioresistance.

SiC以其特有的大禁带宽度、高临界击穿场强、高电子迁移率、高热导率等特点，成为制造高温、高频、大功率、抗辐照及光电集成器件的理想材料。