oxide semiconductor的例句大全

metal oxide semiconductor silicon on sapphire

蓝宝石上硅型金属氧化物半导体

The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor) etc. as substitute for hydrogen thyratrons.

用IGBT（绝缘栅双极性晶体管）和功率MOSFET（金属氧化物半导体场效应管）等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。

Phthalocyanine and oxide semiconductor sensitive materials used for NO 2 sensors in recent ten year are described.

描述了近十年来用作NO2气体传感器的酞菁类和氧化物半导体敏感材料.

cmos sram complementary metal oxide semiconductor static random access memory

互补金属氧化物半导体静态随机存取存储器

Research of Vehicle Noxious Gas Detection Basing on Metal Oxide Semiconductor Sensor

基于金属氧化物气体传感器的车内有害气体检测研究

The present invention reveals a method for producing straining silicon complementary metal oxide semiconductor transistor.

本发明揭示了一种制作应变硅互补金属氧化物半导体晶体管的方法.

The invention discloses a method for manufacturing a complementary metal oxide semiconductor ( CMOS ) transistor.

本发明公开了一种互补式金属氧化物半导体 ( CMOS ) 晶体管的制作方法.

FPGAs rely on the ubiquitous transistor-based technology called complementary metal oxide semiconductor ( CMOS ).

FPGA使用的材料是互补式金属氧化物半导体 ( CMOS ) 技术,这是种随处可见的电晶体技术.

semiconductor, bipolar complementary metal oxide(bicmos)

双极互补金属氧化半导体

Cuprous oxide is a type of material called a semiconductor.

氧化亚铜是一种所谓的半导体材料.

Zinc Oxide ( ZnO ) is a direct wild-gap semiconductor with n-type conductivity.

氧化锌(ZnO ) 是一种 宽禁带 直接带隙的n型半导体材料.

In an example embodiment, a method for adhering MSQ provides for a liner oxide on an aluminum alloy layer on a semiconductor substrate.

在实施例中，该方法保证把MSQ粘附在衬里氧化物在半导体基板上的铝合金层上。

For calcium cobalt oxide ( Ca3Co2O6) which is a P-type semiconductor, the thermoelectric properties is as good as other Co-based oxide thermoelectric materials.

Ca3Co2O6是一个P型半导体材料，它的热电性能和Co的其它的氧化物热电材料性能不相上下。

As an n-type semiconductor material with direct and wide band gap, zinc oxide was widely used in transparent conductive glass, solar cell, flat panel display, gas sensors cell and other fields.

ZnO是一种直接宽禁带的n型半导体材料，已在透明导电玻璃、太阳能电池、平板显示器和气敏传感器等领域得到了广泛应用。

cadmium oxide ( cdo) is a direct wide bandgap semiconductor material.

氧化隔是一种宽禁带直接带隙化合物半导体。

The pompon-like structure was formed by the Vapor-Solid ( V-S) mechanism. With the huge surface of the unique pompon-like structure, the potential application of micrometer scale tungsten oxide in micro-sized semiconductor sensors would be promising.

这些通过Vapor Solid（VS）生长机制形成的绒球状结构氧化钨因为具有巨大的表面积，在微型半导体敏感元件方面具有巨大的应用前景。

Nano-semiconductor cuprous oxide ( Cu2O) was widely used in chemical energy catalytic materials, degradation of environmental pollution organic catalytic materials, highly selective sensors sensitive materials, for its excellent photocatalytic properties.

纳米半导体氧化亚铜（Cu2O）由于良好的光催化性能，广泛应用于化学能源催化材料、环境污染有机物催化降解材料、高选择性传感器敏感材料等研究领域。

Zinc oxide is an important functional and navel material of ⅱ-ⅵ wide bandgap semiconductor.

ZnO是一种重要的功能材料和新型的Ⅱ-Ⅵ族宽禁带半导体材料。

Zinc oxide nano material is a new type direct wide band gap semiconductor material, which has important applications in optical-electron devices.

纳米ZnO是一种新型的宽能带直接带隙多功能半导体材料。

Zinc oxide thin films, a high-quality semiconductor material, can be used as a material of electrical transmission layer in negative electrode of the emission of thin films.

氧化锌是一种性能良好的半导体材料，可以用作薄膜场发射阴极中的电子传输层材料。