p-type的例句大全

The p-type single crystalline Si wafers were used as substrates and CH4 and H_2 as gas resource, the pressure in the reaction chamber was kept at about 7 Torr and the filament temperature at 2200 ℃, the distance between substrate and filament was 7 mm.

生长纳米金刚石膜所用的硅衬底为p型单晶硅，气源为CH4和H2，石英管生长室内的气压控制在7Torr左右，钨丝的温度为2200℃左右，衬底与钨丝间距为7mm。

The sensitivity of nano thin film gas sensor to hydrogen sulfide could be affected by the doping amount of P-type metal oxides.

P型金属氧化物半导体的掺杂量会影响纳米薄膜气敏元件对硫化氢的灵敏度。

A Typical CdTe/ CdS thin film solar cell is composed of a heterojunction with N-type CdS layer and P-type CdTe layer.

典型的CdTe/CdS薄膜太阳电池是由N型的CdS层以及P型的CdTe层构成的异质结组成。

Also, the improvement of quantum dot lasers' performance is investigated through vertical stacking and p-type doping and the optimal dot density, which corresponds to minimal threshold current density, is calculated.

研究了垂直层叠和p型掺杂对量子点激光器性能的改善，并讨论了获得极小阈值电流密度时的最佳量子点密度。

When titania nanotubes are doped into the hole-transport layer, the hole mobility of the device is greatly increased due to the good p-type conductibility of titania nanotubes.

由于二氧化钛纳米管具有p型传导特性，可以显著增大空穴传输层中载流子的迁移率。

There are large charge density on the carbon atoms near the dopant, and the effects of p-type dopants are greater than those of n-type ones.

在掺杂剂附近的碳原子上出现较大的电荷密度，且p型比n型掺杂剂的影响更大。

Comparing with magnetron sputtering, thermal evaporation can fabricate both n-type and p-type conducting CuO thin films without being doped.

同磁控溅射法相比，热蒸发法在不掺杂的情况下，不仅制备出了具有n型导电特性的CuO薄膜，而且制备出了具有p型导电特性的CuO薄膜。

Cobalt ( II, III) oxide stands as an important p-type functional material with applications in lithium ion batteries ( LIBs), heterogeneous catalysts, gas sensors, electrochromic devices, field emission, optical and magnetic materials.

氧化钻（Ⅱ，Ⅲ）是一种重要的功能p型半导体材料，其普遍应用于锂离子电池、催化剂、气体传感器、电致变色、场发射以及光学、磁学等诸多领域中。

Study of Manganese Doped p-type Single Crystal Silicon in the Daubing Source

p型单晶硅涂源掺锰新方法

Analysis and calculation to structure of new small size P-type pintle injection nozzle was introduced.

并介绍了采用有限元法对新型小尺寸P系列轴针式喷油嘴结构进行的分析计算。

In the p-type case, we also predict rich nonmonotonic features in the temperature and density dependences of the hole spin relaxation time, which result from the variation of the hole-impurity and hole-phonon scattering strength.

在p型材料的研究中，我们也预言了空穴自旋弛豫时间丰富的非单调温度、浓度依赖关系。

Review was made on GaN based wide gap semiconductor material and devices, especially for p-type material manufacture, metal-semiconductor contact, material etching, etc.

对GaN基宽禁带紫外探测器材料体系的研究进展进行了回顾，重点介绍了p型材料的制备、金属半导体接触、材料的蚀刻等。

The effect of distribution of holes in the momentum-space on the photoresponse of p-type quantum well infrared photodetector

空穴在动量空间分布对p型量子阱红外探测器响应光谱的影响

properties research on discharge cutting of p-type mono-crystalline solar silicon

太阳能发电用P型单晶硅放电切割特性研究

The effect of doping concentration on Band-gap narrowing of P-type GaAs

掺杂浓度对p-GaAs的带隙变窄的影响

It may be due to opposite type ( being p-type) at surface of α-Si: H ( Y) film.

这是由于α-Si∶H（Y）表面反型。

Numerical Analysis for P-type Pintle Injection Nozzle by Finite Element Method

P系列轴针式喷油嘴的有限元数值分析

An Investigation on the Development of Small P-type Pintle Nozzle and its Low Inertia Injector

P系列轴针式喷油嘴及其低惯量喷油器的研制

At the junction where the two layers meet, electrons pair up with holes, establishing an electric field that prevents electrons from moving from the n-type material to the p-type.

两层接触处电子与“孔”便成双配对地形成了电场，阻止电子从n层移到的p层。

ZnO is a new type of short-wavelength light emitting device material, and the key to make use of the ZnO-based optoelectronic devices is to prepare n-type and p-type ZnO films with the excellent properties.

特别是在光电领域，ZnO是一种新型的短波长发光器件半导体材料，制备可控的n型和p型ZnO晶体薄膜是实现ZnO基光电器件应用的关键。