power transistor的例句大全

for a long time, a common and popular method to solve current convergence problem of microwave power transistor is using emitter ballasting resistor, such as ptc, ctr thermistor, passive devices etc.

长期以来，解决微波功率晶体管的电流集中问题的通用做法是使用发射极镇流电阻，以及PTC，CTR热敏电阻等无源器件。

in this paper, the quality problem of internal matching capacitor in s-band high power transistor is analyzed. the improving method is given. the stability and reliability of internal matching high power transistor are improved.

对影响S波段大功率晶体管内匹配电容的质量问题进行了分析，并给出了改进方法，提高了内匹配大功率晶体管的稳定性和可靠性。

study on dual emitter ballasting of silicon microwave power transistor

硅微波功率器件二次发射极镇流研究

improvement of ballasting for silicon bipolar power transistor

硅双极功率晶体管镇流技术的改进

metal wire bonding interconnection is the key means in the internal matching technology of rf power transistor.

金属键合线互连是射频大功率晶体管内匹配技术中的关键手段。

improving the reliability of internal matching capacitor in s-band high power transistor

提高S波段大功率晶体管内匹配电容的可靠性

Quantitative evaluation of defect according to infrared nondestructive testing principle and quality testing of solder layer of F-4 power transistor package are described. Computer processing results of infrared thermal images are also given.

根据红外无损检测原理，提出了缺陷的定量检测方法，并探讨了F-4型半导体功率管管壳焊料烧结质量的检测方法，最后给出了热图象的计算机处理结果。

Evaluation of Second Breakdown of Giant Power Transistor

巨型功率晶体管二次击穿检测

The results show that silver multilayer metal electrodes deposited by magneton sputtering are effective for reducing the thermal resistance and saturation voltage of power transistor, and for improving the device current character.

结果表明，采用磁控溅射方法制备的银系多层金属电极能显著降低功率晶体管的热阻，减小饱和压降和改善大电流特性。

Influence of Swirl Defects in CZ Silicon on Process of Power Transistor

CZ硅单晶中旋涡缺陷对低频大功率管制造的影响

By combining thyristor switch with large power transistor, large current rectangular pulsed laser power supply with stable smooth top is obtained, pulsed current of 80A and top current fluctuation within 2% are achieved.

采用可控硅开关元件和大功率三极管放大元件相结合的方案，得到稳定大电流脉冲方波激光电源，脉冲电流可达80A，平顶电流波动小于2%。

a c-band ingap/ gaas hbt power transistor with an optimized material structure and device peripheral structure is designed and fabricated by base-emitter metal self-aligning, emitter ballasting, and an electric plated air bridge.

通过优化InGaP/GaAs异质结双极晶体管（HBT）的材料结构和器件结构，采用BE金属自对准、发射极镇流和电镀空气桥等工艺技术，研制了C波段InGaP/GaAs HBT功率管。

High power transistor& inverter type resistance welding power source controlled by microcomputer

微机控制大容量晶体管逆变式电阻焊电源

Due to the important position of termination design in power transistor design, the termination structure applied widely was studied, and its advantage and defect were compared.

鉴于终端设计在功率晶体管设计中的重要地位，本文主要对目前广泛应用的终端结构的研究，探讨它们的优缺点。

Testing on Thermal Characteristics of Pulse Power Transistor under Dynamic and DC Bias

脉冲功率器件直流和动态热特性探测

Failure Causes Analysis due to Heat Stress of Bipolar Microwave Power Transistor

双极型微波功率晶体管热失效原因分析

Measurements for Surface Temperature of a Small Target and Thermal Resistance of Power Transistor

微小物体表面温度测量与功率管热阻测试

At present, according to the principle, the type of potentiostat mainly include magnetic saturation type, SCR, high power transistor type, high-frequency switching type and other different forms of potentiostats.

目前，市面上的恒电位仪的种类从原理上来划分主要包括磁饱和式、可控硅式、大功率晶体管式、高频开关式等不同形式的恒电位仪。

Study of Electric Ray Annealing on High Power Transistor Chip

低频大功率晶体管芯片的电子束退火研究

The Prerequisite for the Optimal Designing of Nucleus Radiation resistant Power Transistor GAT

抗核辐照功率晶体管GAT优化设计的必要条件