silicon substrate的例句大全

Study on Interface Layer of Diamond Film and Silicon Substrate

金刚石薄膜与硅衬底间的界面过渡层

Study on Photoluminescence from Anodic Alumina Films Formed on Silicon Substrate

硅衬底阳极氧化铝膜的荧光发射研究

Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.

研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。

Determinations of Mean Charge Depth and Charge Density in Electret Based on Silicon Substrate

硅基多层无机驻极体薄膜中平均电荷重心和密度的确定

Large-area uniform two-dimensional sub-micrometer patterned n-type doped ( 100) silicon substrate has been fabricated by single exposure with a triple beam and wet chemical etching.

在此基础上，采用三束光一次曝光和湿法腐蚀图形转移技术，在n型（100）硅衬底上制备出了周期在亚微米量级的均匀二维图形阵列。

the surface chemical treatment of sio_2 film electret and its wafer p-silicon substrate crystal orientation

SiO2膜驻极体的表面化学处理及其P-型硅基片的晶向选择

GaN/ Si based devices are of great interest because the silicon substrate has superior properties, such as low-cost, high thermal conductivity, potential applications in the integration of the microelectronics and opto-electronics, mature technology in growth of Si single crystal with large diameter.

由于硅具有价格低、热导率高、大直径单晶生长技术成熟等优势以及在光电集成方面的应用潜力，GaN/Si基器件成为一个研究热点。

co/ cu/ co sandwiches were fabricated on crystalline silicon substrate by uhv electron beam evaporation. the influence of substrate orientation, material of buffer layer and fabrication temperature on the giant magnetoresistance ( gmr) effect in the sandwiches was studied.

采用超高真空电子束蒸发方法在硅单晶衬底上制备了Co／Cu／Co三明治膜，研究了衬底晶向、过渡层材料和生长室温度对三明治膜中巨磁电阻效应的影响；

for p-type ( 100) silicon substrate, the orientation deviation is the main factor influencing pattern distortion in epitaxial buried layer.

本文指出，在影响P型（100）硅处延埋层图形畸变的诸因素中，衬底晶向偏离度是决定性的。

Diamond-like carbon ( DLC ) films were prepared on the single crystal silicon substrate by way of DC-RFPECVD.

采用射频 - 直流等离子体增强 化学气相沉积 技术在单晶硅衬底上沉积了类金刚石薄膜.

Integrated Inductors on silicon were designed and fabricated, and a method was applied to reduce the silicon substrate eddy currents.

设计和制作了硅集成电感，采用常规的硅工艺，在衬底形成间隔的pn结隔离来减少硅衬底的涡流损耗。

In addition, EM simulation of the spiral inductors on the silicon substrate is discussed.

另外, 本论文也讨论到在矽基板上螺旋电感的电磁模拟.

Silicon dioxide thin films were prepared by reactive RF magnetron sputtering on silicon substrate.

采用磁控射频反应溅射法在单晶硅片上制备了二氧化硅薄膜.

The collimated Cr atoms are focused by a standing-wave laser field as they are deposited on a silicon substrate.

采用了一种新的技术方案减小了实验对大的激光功率的要求.利用激光驻波场会聚准直性较好的Cr原子，并使其沉积在硅基片上形成纳米光栅结构。

In this technology, silicon chips are mounted onto a silicon substrate by a flipchip technique.

此技术采用倒装片技术把硅芯片安装到硅基板上。

We found that the detection sensitivity of the mouse IgG microarray was dependent on preparing conditions of porous silicon substrate including etching current density, etching time, and concentration of HF.

实验发现兔抗小鼠IgG抗体检测的灵敏度与多孔硅基底制备时所采用的腐蚀电流密度、腐蚀时间、氢氟酸浓度有关。

Some different thickness aluminum reflective films were produced on silicon substrate by using the electron-beam evaporation method and high purity aluminum target. The reflectivity curves of Al film in the visible light region were measured, the density and conductivity of films were analyzed.

采用电子束蒸发的方法，以高纯度的Al为靶材，硅片为衬底，制备了不同厚度的Al反射膜，并测量了在可见光范围内反射率曲线，分析了薄膜的致密性和电导率。

Copper and copper alloy, because of excellent electric and thermal conductivity, are widely applied in electronic seal material, silicon chip substrate, electrical pick-off contact support and contact materials, contact switch, electrode material used in welding and so on.

铜及铜合金由于其优良的导电导热性广泛应用于电子封装材料、硅芯片衬底、.电接触器触头支撑体和触头材料、触头开关、电焊用电极材料等领域。

photodetector of silicon with net sensitive range has been investigated. the cross stripe range of the net is pn junction and the hole range of the net is substrate material with high resistivity.

研究了网格结构硅光敏二极管，在这种结构中，网格条区为PN结区，网格孔区为高电阻率衬底材料区。

the wetting of mercury on si was chosen as the research object in this thesis. the research work mainly contains the following aspects: this thesis utilizes electrochemical etching technology to prepare the strip and pillar ordered porous silicon array on the n-type 100 si substrate.

本论文选择汞滴与硅基底间的润湿行为作为研究对象，主要开展了以下工作：采用电化学刻蚀的方法，在n型100晶向硅基底上制备出条状和柱状有序多孔硅阵列。