source ion的例句大全

effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation

附加电极半径对空心圆管端点附近离子注入剂量的影响

ionisation source ion separation output

离子源加速区质量分析器

Numerical simulation of collisional sheath evolution in plasma source ion implantation

等离子体源离子注入鞘层时空演化的研究

TiN coating for inner surface modification by grid enhanced plasma source ion implantation

内表面栅极等离子体源离子注入TiN薄膜及其特性研究

Pulsed glow discharge ion source for time of flight mass spectrometer

一种用于飞行时间质谱仪的脉冲辉光放电离子源

The second part presents the design of electron impact ion source of multiple reflection time of flight mass spectrometer.

第二部分是设计了一个用于多次反射式飞行时间质谱仪的电子碰撞离子源。

The capacitively coupled plasma ( CCP) source is an important tool for etching profile of thin gate oxide with high fidelity due to an independent control of ion flux and energy.

甚高频容性耦合等离子体（CCP）是一种主要的刻蚀工具。由于其能分别控制离子通量和离子能量，通常用于高精度的薄栅极氧化层的刻蚀上。

Study on detection of benzene in water using proton transfer reaction mass spectrometry with a glow discharge ion source

辉光放电离子源质子转移反应质谱对水中苯的分析方法研究

Described is an equipment consisting of several systems as follows: an ion system, having a sputtering ion source and an asymmetric three electrode acceleration tube, operated at 50 keV with a beam current up to 4 mA ( for N+);

本设备由以下系统组成：注入系统，有溅射离子源及不对称三电极加速管，能量50keV，流强4mA（N~+）；

The advance in inductively coupled plasma mass spectrometer ( ICP-MS) was reviewed from the views of sample infeed, plasma source, mass analyzer, ion detector and auxiliaries. The application of ICP-MS in tobacco analysis was also introduced.

从进样系统、离子源、质量分析器、离子检测器和辅助系统5个方面综述了电感耦合等离子体质谱（ICP-MS）仪器的进展，并简要介绍了ICP-MS在烟草元素分析中的应用。

Chemical ion source, reacting gas, CH4,20%;

负化学源；反应气：甲烷，20%；

The influence of the activating source power on tin coatings deposited on the matrix of HSS by reactive sputtering ion plating

活化源功率对高速钢基体反应溅射离子镀TiN涂层的影响

Electric Field Calculation of Liquid Metal Ion Source Emitting System

液态金属离子源发射系统的电场计算

Some viewpoints about Kaufman ion source used in thin film process

薄膜加工用考夫曼离子源的几个问题

A spherical porous surface ionizer for the surface ionization sputtering ion source is introduced, and the principle is also explained in the paper.

介绍了1种应用于表面电离型溅射负离子源的球面形透射表面电离器，并阐述了原理。

An argon ion source used for sputtering deposition has been successfully developed based on the construction of hollow cathode connecting hollow anode and the technologies of thermal cathode electron emission arc discharge, plasma magnetic confinement and ion extracting on a curving surface.

本文采用空心阴极空心阳极结构，用热阴极电子发射弧放电驱动并用磁场约束产生等离子体，用曲面发射引出离子束，研制成了氩气放电溅射离子源；

A porous surface ionizer for the negative sputtering ion source

用于溅射负离子源的透射表面电离器的研制

Experiments concerning the ion beam extraction and transmission have been done in Institute of Modern Physics on the Lanzhou Electron Cyclotron Resonance Ion Source No. 3 experimental platform.

针对ECR离子源的束流引出及传输研究，在中国科学院近代物理研究所的LECR3离子源实验平台上开展了大量的实验。

the electric-sweep scanner system was installed on the beam line of lanzhou electron cyclotron resonance ion source no. 3 experimental platform of institute of modern physics.

这套电扫描发射度探测系统安装在中国科学院近代物理研究所（兰州）的LECR3试验平台的束运线上。

Novel Chemical Ion Source for a High-Field Asymmetric Waveform I Mobility Spectrometer Used under Ambient Conditions

一种用于高场非对称波形离子迁移谱系统的新型敞开式化学离子源