source ion的例句大全

An intense ECR ion source for ADS ( accelerator driven sub-critical system ) is described.

介绍了正在研制的一台强流ECR离子源.

Analyze data, gain the rule of ion source discharge.

进行数据分析，得到放电规律。

A new type control circuit of ion source was designed.

阐述了一种离子源的新型控制电路.

In this paper , Development of liquid metal ion source for nanometer focused beam system is introduced.

叙述了为纳米聚焦离子束装置研制的镓液态金属离子源的制备.

KEYWORDS: GIMS, ion source, anode layer, sputtering, TiN, ion plating, medium frequency, pulsed DC.

中文关键词: 气离溅射 、 离子源 、 阳极层流 、 溅射 、 氮化钛 、 离子镀膜 、 中频 、 脉冲直流.

Measuring on Thickness Distribution of DLC Film Deposited by Pulse Ion Source

脉冲离子源所镀膜层厚度分布曲线的测量

An improved PIQ alpha ion source used in the cyclotron

改进的用于回旋加速器上的α离子源

KEYWORDS: GIMS, ion source, anode layer, sputtering, TiN, ion plating, medium frequency, pulsed DC. Influences of solar flare bursts and partical precipitation on the lower ionosphere have been observed by means of VLF propagation effects at Zhongshan Station in Antarctica.

中文关键词：气离溅射、子源、极层流、射、化钛、子镀膜、频、冲直流。在南极中山站利用甚低频传播手段观测太阳耀斑爆发及极区粒子沉降对低电离层的影响。

In order to improve the charge distribution for MEVVA ion source, a radial field was introduced.

为解决麦瓦(MEVVA)离子源束流的径向分布均匀性问题,采取了加入会切磁场的方法.

Spectrum diagnosis as an experimental method, is convenient and irreplaceable in ion source investigation.

本文列举了光谱诊断方法在离子源研究中的几种典型应用.

Since the launch of the global ITER project, many scientists have done a lot of work in the plasma of controlled thermonuclear fusion research, based on the high-energy negative hydrogen ion source neutral beam injection.

自全球ITER计划启动以来，各国在等离子体受控热核聚变研究中，基于高能负氢离子源中性束注入方面做了大量的工作。

The theory of ion etching and the parameter of ion source designing are discussed in detail.

并且详细论述离子刻蚀的原理以及离子源的参数设计.

Hot Cathode Saddle Field Ion Source and its Application in Optical Thin Film Deposition

热阴极鞍场离子源及其在光学薄膜技术中的应用

The capacitively coupled plasma ( CCP) source is an important tool for etching profile of thin gate oxide with high fidelity due to an independent control of ion flux and energy.

甚高频容性耦合等离子体（CCP）是一种主要的刻蚀工具。由于其能分别控制离子通量和离子能量，通常用于高精度的薄栅极氧化层的刻蚀上。

Described is an equipment consisting of several systems as follows: an ion system, having a sputtering ion source and an asymmetric three electrode acceleration tube, operated at 50 keV with a beam current up to 4 mA ( for N+);

本设备由以下系统组成：注入系统，有溅射离子源及不对称三电极加速管，能量50keV，流强4mA（N~+）；