stable diffusion的例句大全

By carbon ion implantation, painting Ag slurry and electric plating Ni into/ on the surface of nanocrystalline copper, some stable diffusion sources are obtained, in which the atoms are interstitial or substitutional.

然后进行表面离子注入碳，表面涂覆银浆和电镀镍等处理，在纳米晶层内部或表面得到一定浓度的间隙或置换溶质原子，热处理后考察它们的扩散行为。

The results showed that the diffusion process of Na+ in the hydrogel was stable diffusion, and the penetration coefficient increased remarkably when the temperature increased, while the increase in penetration coefficient dropped when the temperature was over 60 ℃.

结果表明，Na+在水凝胶膜中的扩散过程为稳态扩散，其渗透系数随温度升高而显著增大，但温度超过60℃，Na+渗透系数的增大幅度显著下降；

Existence of Positive Solutions for a Class of Degenerate and Nondegenerate Stable Diffusion Models

一类退化与非退化稳态扩散模型正解的存在性

pd is more stable than pt on oxidized surface, and the coverage of pd has significant effect on diffusion of oxygen.

而钯在氧化的表面上较为稳定，且钯的覆盖对于氧扩散进块材内的行为有显著的影响。

the method of nonequilibrium dynamics is used to study the stability of stellar structure, including chemical reaction, diffusion and convection. we find that cno cycle is stable.

采用非平衡动力学方法研究由CNO循环决定的恒星结构稳定性，本文得出：CNO循环自身是稳定的；

Existence and Uniqueness of Stable Solutions for Second Order Hopfield Neural Networks with Reaction and Diffusion

具有反应扩散的二阶Hopfield神经网络稳态解的存在唯一性

Asymptotically Stable Solutions of Periodic Diffusion Systems

周期扩散组的渐近稳定解

The three models of virulent gas leak and diffusion are established, respectively is: continual stable state leak and diffusion model, limited period stable state leak and diffusion model, transient state leak and diffusion model.

建立开发了三种有毒有害气体泄漏与扩散模型，分别为：连续稳态泄漏与扩散模型、有限期间稳态泄漏与扩散模型、瞬态泄漏与扩散过程模型。

Diffusion probability density function in fractals is described by stable distribution.

物质在分形结构中的扩散密度分布函数属于稳定分布.

In the initial stage, the sulfate ion concentration increased rapidly in concrete, with diffusion time increasing, the concentration distribution of sulfate in concrete trend to be stable.

在初始阶段，经扩散进入到混凝土内部的硫酸根离子浓度增加较快，随着侵蚀时间的增加，混凝土中的硫酸根离子浓度分布逐渐趋于稳定。

SCB chips by the doped process with oxygen-free silicon diffusion may keep resistance stable and consistent, and impurity concentration gradient helps to decreasing the ignition energy of SCB igniting device.

采用无氧的多晶硅扩散掺杂工艺制作SCB芯片能保持电阻稳定一致，能满足阻值要求，而且这种扩散工艺导致芯片杂质浓度的梯度正好有利于SCB点火装置发火能的降低。