The evaluating method of sputtering cleanout effect on metal target surface by volt-ampere characteristic of target cathode has been given, which provides effective approach to eliminate "target poisoning".
给出了金属靶阴极表面溅射清洗效果的伏安特性评价法,为克服“靶中毒”提供了有效的技术途径。
The planar magnetic control spluttering cathode mainly solves the technical problem of relatively low utilization ratio of the target of the prior planar cathode.
它主要是解决现有平面阴极的靶材利用率相对较低等技术问题。
The Deposition of ITO Film by Using the Low SP Voltage High Target Utilization α Cathode
使用低电压高利用率新型α阴极制备ITO膜
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