temperature coefficient的例句大全

It is the key for the devices to select the film for material with large temperature coefficient of resistance and the detector structure of good thermal isolation ( i.e. bridge structure).

指出了选用具有大的电阻温度系数的膜电阻材料和优良的热绝缘结构（如桥式结构）是研制器件的关键。

The experimental results show that positive temperature coefficient of resistance and breakdown voltage increase, but the resistivity of PTCR ceramics at room temperature changes little when appropriate Ag doped.

结果表明，适量的Ag掺杂对材料的室温电阻率（r）影响不大，并且还可以有效提高PTCR陶瓷的温度系数（aR）和耐电压（Vb）。

And then, photolithography and wet etching were used to pattern the ITO films for electrical measurement, which involved the measurement of temperature coefficient of resistance and the gauge factor.

然后用光刻和刻蚀的方法制作电学测试所需的图形。对于ITO薄膜的电学测试包括对其电阻温度系数和响应因子的测量两部分。

From resistance-temperature ( R-T) measurement and calculation, it is found that both R and temperature coefficient of resistance ( TCR) of the films are increased after annealing.

电阻温度特性测试表明，退火后薄膜的电阻（R）和电阻温度系数（TCR）都明显增大。

As the detecting material of uncooled infrared detectors, vanadium oxide ( VOX) thin films need high temperature coefficient of resistance ( TCR) and suitable film resistance for using of the device.

氧化钒薄膜作为非制冷红外探测器的热敏材料，要求具有高的电阻温度系数（TCR）与合适的电阻值，以满足器件的应用。

The trend of new technique for manufacturing Ni-Cr alloy thin film with a combination of characteristics: high resistivity, low temperature coefficient of resistance ( CR), large gauge factor, and good thermal stability is presented.

阐明了制备具有高电阻率、低电阻温度系数、高应变灵敏系数、良好的热稳定性等优异综合性能的镍铬合金薄膜的新工艺发展趋势。

Bolometer performance has been improved by micromachining technology-the preparation and integration of high temperature coefficient of resistance ( TCR) VOx, nitrogen-doped vanadium oxide and gold black of high infrared absorption, respectively.

通过制备具有高电阻温度系数（TCR）的氧化钒薄膜、掺氮氧化钒薄膜和黑金吸收层并利用微加工技术手段分别将它们集成在探测器上，提高了微测辐射热计的性能。

For high nitrogen Cr Si Ni N films in comparison with low nitrogen Cr Si Ni N films, the variation of electrical resistance was smaller during the heat treatment, and the higher annealing temperatures was needed to obtain a small temperature coefficient of resistance ( TCR).

与低氮含量Cr Si Ni N薄膜相比，高氮含量Cr Si Ni N薄膜的电阻值在热处理过程中变化较小、欲获得较小电阻温度系数（TCR）需要更高的退火温度。

C. Magnetron Sputtering in this paper. The TCR ( Temperature Coefficient of Resistance) of the films were less than 20 × 10-6/ ℃ using optimized deposition parameters, which were adjacent to the bulk material, realized the films of manganin pressure sensors.

根据薄膜理论和工艺实验，采用直流磁控溅射技术对薄膜沉积的工艺参数进行了优化，获得了电阻温度系数TCR≤20×10-6/℃的锰铜薄膜，与块材接近，实现了锰铜压力传感器的薄膜化。

The temperature coefficient of the whole circuit is analysed and minimized.

通过对全电路温度系数的分析计算，找到了最佳的工作条件。

Effects of temperature coefficient of surface tension on the silicon crystal Czochralski growth

表面张力温度系数对硅单晶生长的影响

The test results show that the micro temperature sensing element on PI film exhibits good linearity and a temperature coefficient of resistance is close to 0. 0023/ ℃.

实验测试结果表明，PI村底上的铂薄膜热敏电阻具备良好的线性度，其电阻温度系数接近于0.0023/℃。

Test Study on temperature coefficient for highly pure water conductivity and hydrogen conductivity in power plant

电厂高纯水电导率及氢电导率温度系数的试验研究

A Study on the Temperature Coefficient of Sensitivity Self-compensation Technology of Polysilicon Pressure Sensor

多晶硅压力传感器灵敏温度系数自补偿技术研究

The making of a heater for measuring heat-sensitive resistance temperature coefficient

一种用于热敏电阻温度系数测量加热器的制作

Temperature Coefficient of Polymer Chain with Large Side Group

大侧基高分子链的温度系数

Investigation of factors influencing permeability temperature coefficient(α) of magnetic powder core containing high nickel

高镍磁粉芯导磁率温度系数（α）影响因素的研究

We deduced a expressions for threshold voltage temperature coefficient of short channel MOST.

推导了了一个短沟道MOST阈值电压温度系数表达式；

Characterization of the temperature coefficient of force sensitivity of quartz crystal resonator

石英谐振器力灵敏度温度系数特性分析

Elastic Module Temperature Coefficient Measurement for a Special Alloy Material by Ultrasonic Method

超声法测量某合金材料弹性模量温度系数