threshold current density的例句大全

Calculated results show that when the Al-content of the waveguide and cladding layers are 0.4 and 0.5 respectively, a maximal output power of 11.2W, vertical divergence angle of 19 °, and threshold current density of 266A/ cm2 can be achieved by adapting narrow waveguide layers;

根据计算结果可知：当波导层和限制层铝组分为0.4和0.5时，采用窄波导结构可以获得器件的最大输出功率为11.2W，发散角为19°，阈值电流密度为266A/cm2；

Through the analysis of the loss and threshold characteristics of a laser diode ( LD), the threshold current density of LD with external feedback is calculated, according to the theory of multi-beam interference and the definition of equivalent reflection factor.

通过对半导体激光器（LD）的损耗和阈值电流特性的分析，引入等效反射系数的概念，根据多光束干涉的原理，导出了在外腔反馈作用下LD的阈值电流公式。

The device has a reinforced ridge waveguide structure. The threshold current obtained at 80K is about 0 5A, and the corresponding threshold current density is about 5kA/ cm 2.

该器件具有增强型脊型波导结构，在80K时阈值电流为0.5A，相应的阈值电流密度为5KA/cm2。

For the grooved gate PMOSFET, the study results prove that with the increase of channel doping density, the threshold voltage increases, the drain current driving ability decreases, and the hot carrier effect is suppressed, as in the planar device.

研究发现，随着沟道掺杂浓度的提高，与平面器件相同，槽栅器件的阈值电压提高，漏极驱动能力降低，抗热载流子效应增强；

The field emission characteristics of carbon nanotubes ( CNTs) including turn-on field, threshold field, density of emission current, current stability and electronic energy distribution are discussed in detail.

详细论述了碳纳米管的场致发射特性，包括开启电场、阈值电场、发射电流密度、发射电流的稳定性及场发射电子能量分布等；

Carbon nanotubes ( CNTs) are excellent field emission cold cathode materials with a low threshold electric field and a high emission current density, which make them attractive for potential application in panel display.

碳纳米管（CNTs）具有低的阈值电场和高的发射电流密度，是一种性能优良的冷阴极材料，在平面显示领域具有潜在的应用价值。

The carbon nanotube ( CNT) is a kind of cold cathode material with excellent field emission performance. It has a low threshold electric field and a high emission current density which make it attractive for the potential application in the flat panel display.

碳纳米管是一种性能优良的场发射冷阴极材料，具有低的阈值电场和高的发射电流密度，在平板显示领域具有广阔的应用前景。

The experimental results showed that a threshold of the energy flow density of ion current exists for this PCVD method using the bombarding ions.

实验结果表明，存在一个离子能流密度的阈值。

The doping concentration in the active region has great effect on the waveguide property. With the increasing of doping concentration, the waveguide loss, threshold gain and current density of THz QCL increase, the confinement factor decrease. 3.

结果表明，随着有源区掺杂浓度的提高，波导损耗增加，阈值电流增加，波导限制因子降低。

The RTD has a room temperature peak-to-valley ratio of 5.2 ∶ 1 with a peak current density of 22.5kA/cm2.The HEMT has a 1 μ m gate length with a-1V threshold voltage. A logic circuit called a monostable-to-bistable transition logic element ( MOBILE) circuit is developed.

RTD室温下的峰谷电流比为5.2∶1，峰值电流密度为22.5kA/cm2.HEMT采用1μm栅长，阈值电压为-1V.设计电路称为单稳态-双稳态转换逻辑单元（MOBILE）。