threshold shift的例句大全

The number of efferent nerve endings in the cochlea is decreased with the increase of threshold shift in each experimental group.

各实验组耳蜗传出神经末梢计数随阈移增大而减少，与对照组相比差异均有显著性；

Conclusion: Adenosine can inhibit the elevation of glutamate and decrease the threshold shift of CAP after exposure to noise, which can protect cochlea in acute acoustic trauma in guinea pigs.

结论：腺苷可使噪声暴露后耳蜗外淋巴中谷氨酸浓度明显降低，复合动作电位阈移值减小，提示腺苷对急性声损伤耳蜗有保护作用。

Finally, the mechanism of threshold shift was discussed.

根据实验结果对器件阈值电压漂移的机理进行了探讨。

Threshold shift of MOS devices is the main damage caused by total dose radiation effect.

阈值电压漂移是电离辐照总剂量效应对MOS器件产生的主要损伤。

Under the same intensity, the threshold shift caused by noise increased with the frequency increased.

在相同的强度下，低频噪声引起的阈移小，高频噪声引起的阈移大。

Hearing threshold shift and hair cell loss in guinea pigs exposed to narrow-band noise

窄带噪声暴露后豚鼠听阈偏移及毛细胞的损伤

Amelioration of nerve growth factor against noise-induced threshold shift: a transmission electron microscope observation

神经生长因子减轻噪声性阈移的透射电镜观察

Changes of Hearing Threshold Shift in Guinea Pigs after Exposure to Engine-room Noise

在100、105、110dBA机舱噪声下暴露后豚鼠的听阈偏移

A comparison of hearing threshold shift between humans and guinea pigs after broadband noise exposure

宽带噪声暴露后人与豚鼠听阈偏移的比较

Changes of Hearing Threshold Shift in Guinea Figs after Inhalation of Different Doses of Toluene

豚鼠吸入不同剂量的甲苯引起的听阈偏移

The laser feedback interference in λ/ 4 phase-shifted index-coupled and gain-coupled Distribute Feedback laser diodes is analyzed. The threshold gain and oscillation frequency variation in DFB laser diode are theoretically deduced, and present the expression of complex feedback sensitivity.

分析了λ/4相移折射率耦合型及增益耦合型分布反馈激光器的自混合干涉效应，推导出分布反馈激光器的增益及频率的变化，并给出复反馈灵敏度系数表达式。

The mechanisms for a-Si ∶ H-TFT threshold voltage shift were analyzed. That is, the influence of charges injecting into SiN_x ∶ H gate insulator and the creation of meta-stable states in a-Si ∶ H to a-Si ∶ H-TFT threshold voltage shift under gate bias stress were analyzed.

分析了a-Si∶H-TFT阈值电压漂移的机理，即分析了栅偏应力下电荷注入到sin x∶H栅绝缘层和a-Si∶H中亚稳态的产生对TFT阈值电压漂移的影响。

For the exactly soluble case of unidirectional ring laser with a homogeneous broadened line, the frequency shift relation, the critical and threshold value of inversion, the phase transition behavior and the features of the two-photon lasers with injected signal are analysed.

就可以精确求解的均匀展宽、单向环形激光器的情形，分析了频率位移关系，反转度的临界值和阈值，相变行为，以及带有外加讯号的双光子激光的特性。

Of particular note is the deviation threshold parameter and the dimensional shift parameters.

需要特别注意的是偏差阈值参数和空间移位参数。

The threshold voltage of a-Si ∶ H/ SiN_x ∶ H TFT will shift under long time gate bias stress, it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor.

a-Si∶H/sin x∶H TFT在长时间栅偏应力作用下，会产生阈值电压漂移，这主要是由绝缘层电荷注入和有源层亚稳态产生而引起的。

A Primary Study of the Instability of the Threshold Voltage Shift of Native MOS Transistors Separation and Preliminary Analysis of the Shift Errors in Four-frequency Ring Laser

国产MOS场效应晶体管阈值电压不稳定性的初步探讨四频环形激光零漂误差的分离及研究

The results indiCated that the shift of threshold voltage of edgeless CMOS/ SOS is almost the same with that of typical CMOS/ SOS for total dose radiation, so is the slope function of log ( I)-V curve.

结果表明，在总剂量辐照下，封闭棚和条形栅CMOS／SOS器件的阈电压及log I－V曲线亚阈斜率的变化趋势基本相同。

The threshold voltage's shift versus the dose rate was analyzed on this device.

分析了该电路的阈值电压随辐射剂量率的变化关系。

For the dyes with triphenylamine, the introduction of thiophene afforded a red-shift maximum absorption and threshold wavelength and improved molar extinction coefficient.

在三苯胺为给体的染料中，引入噻吩后，染料的最大吸收波长和吸收截止波长都出现红移，染料摩尔消光系数提高。