zns的例句大全

The ZnS nanowires with diameters of tens of nanometers are formed in the lower temperature zone of 720-670 ℃.

而在720～670℃温区，产物形貌为直径约几十纳米的ZnS纳米线。

The thermodynamic process of acid pressure leaching of high iron sphalerite is studied and three ε-pH figures of ZnS-H_2O system, FeS-H_2O system and ZnS-FeS-H_2O system at 150 ℃, 1 MPa have been drew, respectively.

对高铁闪锌矿高压酸浸的热力学过程进行了研究，并绘制了150℃、氧气压力为1MPa时，浸出体系中ZnS-H2O系、FeS-H2O系、ZnS-FeS-H2O系的电位-pH图。

First, this study compares thick source ZnS alpha-counting calibration results of the photomultiplier tube ( PMT) high voltages and thresholds calibrated by the oscillograph with those by different sources.

利用不同标定源对美国Daybreak582、583型低本底厚源ZnSA1pha计数仪光电倍增管高压（HV）和积分甄别器阈值电压（DISC）进行了标定，并与示波器标定结果进行了对比。

The Local Electric Field in ZnS: Mn Thin Film Electroluminescence Devices

ZnS：Mn薄膜电致发光器件中的局域电场

The excitation process of TM ion in zns: tm thin film electroluminescence

ZnS：Tm薄膜电致发光的激发过程

Using thioacetamide as precipitator, the ZnS/ Al composite particle was prepared.

另以硫代乙酰胺为沉淀剂，制备了ZnS/Al复合粒子。

Photocatalytic Performance of Sodium Thioglycolate Modified ZnS Synthesized by Room Temperature Solid Phase Method

固相反应法合成的巯基乙酸钠修饰ZnS的光催化性能

Third harmonic of ps laser in a ZnS thin film waveguide

ZnS光波导中微微秒激光的三次谐波

Structural Analysis of ZnS Thin Film Prepared by Thermal Evaporation

热蒸发制备的硫化锌薄膜的结构分析

Technic of annealing ZnS: Mn thin films deposited by thermal evaporation in sulfur saturated vapor was described.

本文介绍了电阻蒸发ZnS∶Mn薄膜在硫饱和蒸汽压下进行热处理的工艺。

The study shows that the morphology and diameter of ZnS nanostructures synthesized by thermal evaporation correlate closely with the growth temperature of ZnS nanostructures.

分析表明：ZnS纳米结构的形貌和直径与纳米结构的生长温度有关。

In this paper, we report the photoluminescence from high quality nanocrystalline ZnO thin films. The high quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800 ℃, which are deposited by low pressure metal organic chemical vapor deposition technique.

报道了利用低压金属有机物化学气相沉积技术生长纳米ZnS薄膜，然后，将ZnS薄膜在氧气中于800℃温度下进行热氧化制备高质量纳米ZnO薄膜。

Properties of ZnO Prepared by Thermal Oxidation of ZnS at a Low Temperature

ZnS低温热氧化制备ZnO薄膜及其物性的研究

Preparation and optical performance study of ZnS/ CdS single offset superlattice

ZnS/CdS单带差超晶格薄膜的制备及光学性质研究

The surface tension and density of Cu_2S& FeS pseudo-binary system are discussed. The influence of temperature and the addition of ZnS into the matte on the surface tension and density are also examined in the paper.

本文讨论了Cu2S-FeS伪二元系的表面张力和密度，研究了温度及往冰铜中添加ZnS对体系表面张力、密度的影响。

Study on Growth Technology and Crystal Defects in ZnS Bulk Crystal Prepared by CVD Method

用化学气相沉积（CVD）法制备硫化锌（ZnS）体块材料中晶体缺陷和生长工艺的研究

A new method to prepare ultrafine ZnS powder by homogeneous precipitation

均匀沉淀法制备ZnS超细粉

Cu+ possesses a strong thermo-diffusion with diffusivity of about 10-9 cm2/ s in ZnS.

Cu+在ZnS中具有很高的热扩散率，500℃时热扩散系数已达10-9cm2/s，是各种杂质中热扩散最强的杂质。

Quantum Size Effect of CdS, ZnS Doped Nanocomposites

CdS，ZnS掺杂纳米复合材料的量子尺寸效应

Electroluminescence is based on the semiconductor materials such as ZnS doped with Cu and Mn driven by electric field.

电致发光主要是在以ZnS等为基质的半导体材料中加入少量Cu、Mn等激活剂后在电场作用下发光。