ohmic contact

If there is a large contact resistance between the electrode and the semiconductor film, the performance of devices would be significantly decreased due to heat or poor contact. Therefore, ohmic contact with low resistance and thermal stability is very critical.

如果接触电极和半导体之间存在较大的接触电阻，那么器件的性能就会由于散热或者接触不良而显著下降，因此获得低电阻、热稳定的欧姆接触非常关键。

Cold Gas Dynamic Spray processes for the ohmic contact between Al electrode and PTC ceramics are studied. Microstructural analysis of Al electrode has been preformed by SEM techniques.

研究了冷气动力喷涂方法（CGDS）制备PTC陶瓷欧姆接触Al电极的喷涂工艺，用扫描电子显微镜分析了电极的显微结构。

Study of Ohmic Contact and UV-detector Based on GaN/ Si

硅基GaN欧姆接触及紫外探测器的研究

The Test of Ohmic Contact Quality for Metal/ Thin Layer or Super Thin Semiconductor Layer by Adding and Taking Disc

用挖补圆盘法检测金属与薄层、超薄半导体层的欧姆接触性能

The Ohmic contact and photoresponse of a ZnO single crystal film produced by MOCVD are investigated. The electrical and photoresponsive changes in the ZnO film due to the RF sputter deposition of SiO_2 ( antireflective coating) are also discussed.

对采用MOCVD方法沉积的ZnO单晶薄膜的欧姆接触特性、光电特性进行了研究，并对比研究了射频溅射沉积SiO2抗反射膜对ZnO薄膜I-V、光电特性的影响。

US/ VIS spectrophotometer of the product film has showed that it has a higher transmissivity than an ITO film in ultra violet region. Upon characteristics test, a-Si/ Ti interface has been found to approximate an ohmic contact.

利用US／VIS分光光度计测试了生成物的透过率，发现其透过率在紫外较ITO膜提高，测量了a－Si／Ti界面特性近似为欧姆接触。

New ohmic contact structure and air-bridge are employed to improve microwave power performance.

为了提高微波功率器件性能，采用新的欧姆接触和新型空气桥方案。

A novel structure of ideal ohmic contact p+ ( SiGeC)-n& n+ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized.

将新器件结构与新型半导体材料相结合，提出了一种新型的n-区三层渐变掺杂理想欧姆接触型p+（SiGeC）-n&n+异质结功率二极管，并对n-区的杂质分布梯度进行了优化。

The electrodes are baked by using silver paster in order to obtain good ohmic contact.

采用Ag浆烧制电极，以达到良好的欧姆接触。