on-state voltage

On-state voltage characteristics curve of TRIAC are given based on the experimental findings, and analysis of the curve.

根据实验数据给出了双向晶闸管（TRIAC）的通态电压特性曲线。

Simulation results show that the doping profile and width of P base region are important to the on-state voltage drop of Gate Controlled Thyristor.

模拟结果表明，P基区的掺杂浓度和宽度对门极换流晶闸管通态压降有着重要的影响。

Because of its high input impedance, low loss, fast switching speed, low on-state voltage drop-out and large on-state current, IGBT has become the mainstream product in the field of power components and been used in numerous fields.

因为输入阻抗高、损耗低、开关速度快、通态压降低，通态电流大等优点成为现今功率器件发展的主流产品，广泛应用于各个领域。

The effect of total doping amount QE of emitting region P on on-state voltage drop VT is discussed and the expression for the relationship between QE and VT is derived.

分析了P发射区杂质总量Q E对晶闸管通态压降V T的影响，导出了Q E与V T的关系式。

In particular, the combination of the field stop concept with the trench transistor cell results in an almost ideal carrier concentration for a device with minimum on-state voltage and lowest switching losses.

特别是场截止概念与挖槽晶体管单元的结合能产生通态电压最小、开关损耗最低、载流子浓度近乎理想的器件。

Analyses on Turn-Off Time and On-State Voltage Drop of a New Type of Thin Emitter Thyristors with Low Loss and High Speed

新型低损耗快速薄发射极晶闸管关断时间和通态压降的分析

It is demonstrated by numerical simulation that the trade-off is superior to the devices using unlocalized lifetime control, the forward on-state voltage can be reduced by 0.6-1.4 V at the same turn-off speed, and it can avoid the snap-back phenomena of anode-short structure.

数值模拟表明，该器件的t f～V F折衷关系优于采用非局域寿命控制的器件，在相同关断速度下其正向压降可降低0.6～1.4V，避免了阳极短路结构的正向快速返回现象。