photoluminescence

A novel terbium complex, Tb ( acac ) 3 dad , was synthesized and the photoluminescence ( PL ) properties were studied.

合成了一种新型的稀土配合物Tb ( acac ) 3dad, 讨论了其 光致发光 的性质.

The mechanism of the Photoluminescence and Electroluminescence has been discussed in briefly.

简要分析了其光致发光和电致发光的机理.

Synthesis of AlN Nanocrystals in Organic Solvent at Atmospheric Pressure and Photoluminescence Study of FEP/ AlN Composites with High Thermal Conductivity and Insulating Properties

纳米氮化铝常压溶剂热合成及其光致发光聚全氟乙丙烯/氮化铝高导热绝缘复合材料的研究

Photoluminescence-PL is a phenomena which is caused by the optical excitation of luminophor. It is not commonly to be used to study the struction of the polymer.

光致发光（Photoluminescence-PL）是用光激发发光体引起的发光现象，用于研究绝缘聚合物结构并不常见。

For the 1 % Er ~3 +-doped Al _ 2 O _ 3 powders, the photoluminescence ( PL ) intensity increases with increasing sintering temperature.

研究了Er~3+掺杂浓度和烧结温度对掺Er~ 3+:Al_2O_3粉末发光特性的影响, 掺Er~3+:Al_2O_3粉末具有1.53μm波长的光致发光特性.

The photoluminescence of cerium-terbium coactivated magnesium borate

铈铽激活硼酸镁的光致发光

The band edge excitonic transitions were measured by the reflectivity and photoluminescence measurements.

利用反射及光激萤光量测能隙边缘的激子跃迁.

Ag-inorganic nano-composite systems possess interesting properties of nonlinear optical susceptibility , optical absorbance and photoluminescence.

Ag - 无机纳米复合材料在光学非线性 、 光吸收、光致发光等方面具有优良性能.

In this paper, we report the photoluminescence from high quality nanocrystalline ZnO thin films. The high quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800 ℃, which are deposited by low pressure metal organic chemical vapor deposition technique.

报道了利用低压金属有机物化学气相沉积技术生长纳米ZnS薄膜，然后，将ZnS薄膜在氧气中于800℃温度下进行热氧化制备高质量纳米ZnO薄膜。

Synthesis, Crystal Structure and Photoluminescence of a Dinuclear Zinc Complex Zn ( C_ ( 15) H_8O_7S)( DMSO)_2 · H_2O

双核锌配位化合物[Zn（C（15）H8O7S）（DMSO）]2·H2O的合成和晶体结构及光致发光性能研究

UV-VUV Photoluminescence and Host Electronic Structure of Several Typical Rare-earth Silicates

几种典型稀土硅酸盐的UV-VUV光致发光性能及其基质电子结构研究

Infrared stimulation band is narrowed and blue photoluminescence is found in infrared up conversion spectra.

ETM有序纳米阵列的红外响应区变窄,同时在红外激励发射光谱中出现了较强的蓝光区辐射带.

Photoluminescence investigation of nominally undoped bulk InP at low temperature

非掺杂InP的低温光致发光研究

The excited spectra and emissive spectra of the products were detected by fluorescence luminometer and its feature of red photoluminescence were determined.

经荧光光度计测定合成产物的激发光谱与发射光谱，确定合成粉体的光致发红光的特性。

Study of Structure and Photoluminescence Properties of the ZnO Thin Film Deposited by Pulse Laser Deposition

脉冲激光沉积制备ZnO薄膜及其发光性质研究

Photoluminescence study for nanometer Ge particles embedded Si oxide films

含纳米锗粒二氧化硅薄膜的光致发光研究

The optical characteristics of Ge QDs were studied by photoluminescence.

采用光荧光谱分析了Ge量子点的光学特性。

Photoluminescence of porous silicon and PS/ PMMA composites was investigated. The result shows that the spin coating method is better relatively.

实验结果表明，用旋涂法实现的PMMA固化后再与多孔硅复合而制得的样品的结果最好，它与原始的多孔硅样品相比，发光峰发生了蓝移而且发光强度下降很小。

Photoluminescence spectra that were excited by Xe laser at room temperature showed a blue band emission with great intensity.

其氤灯激光PL谱表明样品具有很强的蓝色发光。

Photoluminescence of One Dimension ZnO Single Crystal Columns Array Excited by Different Space Variation Direction

一维氧化锌柱阵列空间取向激发的荧光光谱研究

Photoluminescence of Ga_2O_3 Thin Film and Characterization of Laser Ablated Species

Ga2O3薄膜的光致发光及激光烧蚀产物的分布

It'shows that the collection is superposition of Raman and photoluminescence spectrum.

结果表明,所采集到的是拉曼光谱和光致发光光谱的叠加.

Synthesis and Photoluminescence of ZnO Nanorods Prepared by Alcohol Thermal Method

醇热法制备ZnO纳米棒及其发光性能

The structure and upconversion luminescence properties of oxy-fluoro-tungstosilicate glasses and oxy-fluoro-tungstosilicate glass ceramics were studied by absorption spectra, photoluminescence spectra, raman spectra, infrared spectra, differential thermal analysis, simultaneous thermal analysis and X-ray diffraction and so on.

并用吸收-透射光谱、发射光谱、拉曼光谱、红外光谱、差热分析、同步热分析、X射线衍射等手段研究了上述玻璃和微晶玻璃的结构和发光性能。

Using the latest parameter's data of Yb-Er co-doped Al2O3 films, the results show that Yb3+ co-doping can increase photoluminescence intensity and population inversion and lower the threshold power.

利用Yb-Er共掺Al2O3薄膜的相关数据进行模拟计算，结果显示Yb的掺杂可提高Er3+的荧光强度和反转粒子数，并使实现粒子数反转的阈值泵浦强度最大可降低一个数量级。

The Photoluminescence spectrum of GaN: Si showed that the integration intensity of the main peak increased and luminous intensity of the yellow band droped with Si exiting.

n型GaN薄膜的光荧光谱图显示，主峰的积分强度随着掺硅浓度的增高而增高，黄带峰的发光强度反而下降。

The photoluminescence of ultra-short period GaAs/ AlAs superlattices has been investi-gzted at 77K under hydrostatic pressure up to 30 kbar.

在77K下，0&30kbar静压范围内研究了GaAs/AlAs超短周期超晶格的静压光致发光。

Photoluminescence Characteristics of Zinc Sulfide Doped by Thermal Diffusion of Halogen in Gas Phase

卤素掺杂硫化锌发光特性的研究

The oxygen reactive etching during the processing is found out to be an effective way to improve the photoluminescence of ZnO nanorods.

论文还发现长时间氧气反应离子刻蚀能够提高氧化锌纳米棒光致发光特性的作用。

There is no harm when aluminate long afterglow photoluminescence materials are produced and used.

硫化物型的发光材料性能不稳定,在生产和使用中应注意安全防护.