quantum dot

Investigations of three-terminal electronic measurement on quantum dot devices

量子点器件的三端电测量研究

Application of Quantum Dot Labeling to Development of Immunochromatographic Test Strip for Rapid Detection of Ractopamine

量子点标记免疫层析试纸条快速检测莱克多巴胺的研究

We investigate two kinds of low-dimensional semiconductor systems by full-band kp method, one-dimensional resonant tunneling diode ( RTD) and zero-dimensional quantum dot ( QD). We mainly study the dependence of tunneling properties on the interface charge in the GaN RTD.

本论文使用全带kp计算方法研究了这两种低维半导体系统：一维共振隧穿和零维量子点结构体系。

The Ground State Energy of a Quantum Dot with Impurity

含类氢杂质的量子点的基态能

The investigation of roughing effect sensitive to size in graphene quantum dot device

graphene量子点的起伏效应对尺寸的敏感性研究

Studies of Third-order Nonlinear Optical Susceptibility in InGaN/ GaN Quantum Dot

InGaN/GaN量子点中三阶非线性光学极化率的研究

Modulation response analysis of 1.3 μ m quantum dot vertical-cavity surface-emitting lasers

1.3μm量子点垂直腔面发射激光器高频响应的优化设计

Studies on the Nonlinear Optical Properties in Coupled Quantum Wells and Cylindrical Quantum Dot Quantum Well tapered center-column rotameter

非对称耦合量子阱、柱形量子点量子阱中非线性光学性质研究锥形芯柱式转子流量计

Research on the critical size of the substrate mesa for single quantum dot growth.

生长单一量子点时台形衬底的临界尺寸的研究。

An analytical method based on Green's function for calculating strain filed in quantum dot structures of arbitrary shape was presented.

运用解析方法对量子点的结构进行分析，通过对积分核函数进行计算，可以得到各种量子点结构的应力应变分布。

We introduce a new kind of semiconducter material named quantum-dot quantum wells ( QDQWs) and establish a proper mathematical model for it. After that, we introduce a sort of expansion function celled B-spline and analogise it's normal quality.

介绍了一种被称为量子点量子阱（Quantum-dot quantum wells简称QDQWs）的新型半导体材料，并为其建立了合适的计算模型。

Quality Factor and Decoherence Mechanism of Rabi Oscillation in Semiconductor Quantum Dot

半导体量子点Rabi振荡品质因子及其退相干机制

Spin-polarized Transport through Single Quantum Dot System

单量子点体系极化电子的输运

Third-order Nonlinear Susceptibility in a nc-Si/ SiO_2 Spherical Quantum Dot

nc-Si/SiO2球形量子点的三阶极化率

Also, the improvement of quantum dot lasers' performance is investigated through vertical stacking and p-type doping and the optimal dot density, which corresponds to minimal threshold current density, is calculated.

研究了垂直层叠和p型掺杂对量子点激光器性能的改善，并讨论了获得极小阈值电流密度时的最佳量子点密度。

Spin State Oscillations in a Two-electron Quantum Dot under a Magnetic Field

磁场下量子点中二电子系统的自旋振荡

An Experimental Study on the Synchronizing Detection of Anti-toxoplasma IgG and IgM Antibody Based on Quantum Dot and Immune Magnetic Bead Technique

基于量子点和免疫磁珠技术同步检测抗弓形虫IgG和IgM抗体的实验研究

In this Paper , the coherent transport characteristics of electrons tunneling through a quantum dot are investigated.

摘要研究了电子隧穿通过量子点的相干输运特性.

Preparation and Optical Properties of ZnS/ HgS/ ZnS/ CdS Quantum Dot Quantum Well System

量子点量子阱ZnS/HgS/ZnS/CdS的制备与光学特性

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers'

GaAs基长波长量子点激光器增益和阈值电流密度的理论分析（英文）

Normally incident infrared absorption in vertically aligned ingaas/ gaas quantum dot superlattice

InGaAs/GaAs垂直对准量子点超晶格的正入射红外吸收

The quantum dot relaxation rate, i.e. temperature influence on the optical switching is discussed.

分析了量子点驰豫速率即温度对光开关的影响。

When attaching superconducting electrodes to a quantum dot, the hybrid structure of superconductor-quantum dot-superconductor has formed.

当我们把超导材料作为电极加在量子点左右两端时，就形成了超导-量子点-超导的杂化结构。

Fano Effects in Transport Through a Coupling Quantum Wire-dot System

耦合量子线&量子点体系中Fano效应的研究

High Power In ( Ga) As/ GaAs Quantum Dot Laser

大功率In（Ga）As/GaAs量子点激光器

Influence of an Impurity on the Binding Energy for an Cylindrical Quantum Dot

杂质对柱形量子点系统束缚能的影响

The time-averaged occupation number, the time-averaged differential conductance and time-averaged current are calculated self-consistently in the quantum dot.

时间平均占据数，时间平均电导以及时间平均电流被自洽计算得到。

In chapter three, we study the effect of external noise on the dynamical localization of two interacting electrons moving in an isolated one-dimensional quantum dot array.

第三章研究了在无外源耗散的情况下，外部噪声对含有两个相互作用电子的一维量子点链系统中的动态局域化性质的影响。

In section 4, the properties of the vibration frequency, the interaction energy and the effective mass of the polaron in a parabolic quantum dot, which is a strong-coupling with LO phonon, are reached.

在第四节中研究抛物量子点中与LO声子强耦合极化子的振动频率、相互作用能和有效质量的性质。

We create a simple two-level structure model. We use the density matrix method to calculate the first-order and third-order absorption and refractive index of the InGaAs/ InGaAsP quantum dot.

基于我们建立的简单二能级结构模型，采用密度矩阵方法计算了InGaAs/InGaAsP量子点的一阶和三阶吸收系数和折射率。