shallow junction

A study of shallow PN junction technology for VLSI by rapid thermal annealing

用白光退火研究VLSI浅结工艺

LDD ultra shallow junction can be reachec by low energy and high dose implant.

可以通过低能量,高剂量的等离子注入来实现LDD超浅结(ultrashallowjunction).

Ion implantation technique for the fabrication of very high-speed bipolar circuits is discussed in the paper, with emphasis on the ion implantation doping and shallow junction formation and the annealing of the implanted layer in bipolar device process.

本文讨论了高速双极器件制造中的离子注入技术。重点讨论在双极器件制造工艺中的离子注入掺杂技术，离子注入形成浅结技术，以及离子注入层的退火技术。

A Surface Process on Silicon Chip Suitable for LSI and Shallow Junction Device

一种适于LSI及浅结器件的硅片表面加工技术

New n ￣+ p Shallow Junction Formation Method by Using Solid State Epitaxial CoSi_2 as Diffusion Source

固相外延CoSi2薄膜作为扩散源形成n~＋p浅结技术研究

Ultra-shallow Junction Used in Nano Devices and Development of Related Ion-doping Techniques

纳米MOS器件中的超浅结和相关离子掺杂新技术的发展