silicon detector

P type ultra high purity silicon detector

p型超纯硅探测器

The developing trend of X ray testing technology is to use the amorphous silicon flat panel detector(α Si FPD) instead of film screen images.

基于非晶硅面阵探测器的检测技术代替胶片成像已成为今后射线检测的发展方向。

The time and energy calibration of the silicon detector has been done by using the secondary beam from 16O at 95MeV/ u.

利用95MeV/u的~（16）O束产生的次级束流对半导体硅探测器进行了时间和能量定标。

Amorphous Silicon Flat-Panel X-Ray Detector Digital Imaging System

非晶硅X线平板探测器数字影像系统

CMOS Compatible MEMS P/ N Polycrystalline Silicon Thermopile IR Detector

CMOS兼容的微机械P/N多晶硅热电堆红外探测器

It researches the digital radiography technology based on the amorphous silicon flat panel detector.

研究了基于非晶硅面阵探测器的对焊缝数字射线检测技术.

The design and fabrication of hydrogenated amorphous silicon thin film UV detector

氢化非晶硅薄膜紫外线探测器的设计和制备

In this paper the practical structure of amorphous silicon thin film transistor-based uncooled infrared detector is considered, two mathematical models to calculate infrared absorptance are described and the optical properties are studied in use of optical admittance matrix method.

针对非晶硅薄膜晶体管室温红外探测器的实际结构，提出了两种计算红外吸收率的数学模型，并结合光学导纳矩阵法研究了它的光学特性。

Time compensation method is used in a compact heavy ion timing detector with a microchannel plate. The time resolution of 200 ps has been achieved using a silicon detector as a stop detector.

在由微道板构成的一种简洁的重离子定时装置中，采用了时间补偿方法减小时间分散，以半导体探测器为停止探测器时，取得了200ps的时间分辨。

For these reasons, we committed a photodiode scintillation detectors base on silicon PIN photodiode and NaI ( Tl) crystal, In this research, we have designed a gamma radiation detection instrument which using a new type scintillator detector.

基于以上诸多因素，展开对基于硅PIN光电二极管和NaI（Tl）晶体的闪烁探测的研究。在本研究中，设计了一款采用了一种新型闪烁探测器的γ辐射检测仪。

The result shows that the amorphous silicon flat-panel detector system has better performance.

比较病人的照射剂量和胸片的得分,得到的结论是,非晶硅平板探测器的表现要好一些.