silicon sensor

Research and compared with other types of vibration sensor, the sensor select the integration of standard CMOS process with MEMS technology, not only select laser as a tool but also select silicon material in the process as sensitive inertia material.

研究与比较其他类型的振动传感器，本传感器选用标准的CMOS工艺与MEMS工艺相结合，以激光作为探测工具，以硅工艺中的硅材料作为敏感惯性材料。

The silicon chip of dual-E form non-integral structure has been introduced, which is prepared by the technique of anisotropic wet etching of silicon and the sensor of pressure sealed and packaged based on this chip.

介绍利用硅的各向异性腐蚀工艺腐蚀出的一种双E形结构非整体结构弹性膜硅芯片及用此芯片封装成的压力敏感元件。

The structure, preparation and properties of amorphous silicon ( a-Si) material were de-scribed. The application of a-Si in sensors, such as photodiode, colour sensor, X-ray sensor and stress sensor etc.

叙述了非晶硅半导体的结构、制备方法及特性，介绍了非晶硅在制作光电传感器、色敏传咸器、放射线（X射线等）传感器及应变传感器等方面的应用。

Silicon integrated thin film microelectrode based electrochemical sensor devices has been fabricated using silicon micromachining techniques.

研究讨论了硅一体化微机械结构型薄膜微电极电化学传感器件的稳定性及其相关的电化学问题.

Thermal Simulation of Silicon Gas Flow Sensor and Its Packaging

硅热流量传感器封装的热模拟分析

Integrated Silicon Thermal Flow Sensor

集成硅热流量传感器

The experimental results showed that the substrate of pyroelectric sensor could significantly affect the detectivity. The porous silicon dioxide and PET plastic film substrate could effectively decrease the thermal conduction and the thermal fluctuation noise of the pyroelectric element, increase the voltage responsivity and the detectivity obviously.

结果表明，多孔氧化硅和PET塑料可有效降低热释电元件的对外热传导，明显提高传感器的电压响应率和降低热释电元件的热噪声。

A new kind of sensor for gas test based on the method of light addressable potentiometric sensor ( LAPS) and porous silicon technique is developed.

结合光寻址电位传感器及纳米多孔硅技术研制了一种新型的气体传感器。

Based on the silicon thermal flow sensor, a FEA model is given.

基于作者所在实验室研制的硅热流量传感器，给出了其有限元模型。

The Study on the Thermal Microfluidic Sensor Based on Silicon

硅基热流式微流量传感器研究