silicon slice

Single crystal silicon slice as target, Ar and O_2 respectively as sputtering and reacting gas, a silicon oxides ( SiO_x) film was deposited on Al substrate by reactive magnetron sputtering.

以单晶硅片为靶材，高纯Ar和O2分别为溅射气体和反应气体，采用反应磁控溅射法在铝基体上制备了硅氧化物薄膜。

The wire sawing process has been applied to slice single silicon into thin wafers for its character of minimum warp, uniform thickness and low kerf loss.

由于线锯切割具有切片薄、表面翘曲变形小、厚薄均匀和切口损失小等优点，被广泛用于单晶硅切片加工。

Zr-Ni-N coextruded film is deposited on high speed steel and single crystal silicon slice by using vacuum arc deposition technique. The influences of low energy nitrogen ion beam aid deposition on coating structure, morphology and hardness of Zr-Ni-N film are studied.

采用多弧离子镀技术在高速钢和单晶硅基体上制备Zr-Ni-N复合薄膜，研究了低能氮离子束对Zr-Ni-N涂层结构、表面形貌和硬度的影响。

Acid-etching and alkali-etching methods were used to etch on single-crystalline silicon slice and the influence of temperature, time and solution concentration on the surface morphology was explored.

采用酸碱两种不同的化学蚀刻液对单晶硅表面进行蚀刻，通过扫描电镜（SEM）对其形貌进行了表征，考察了蚀刻液浓度、蚀刻时间及温度对表面形貌的影响。

A small slice of a semiconductor, usually silicon, that contains miniaturized electronic circuit.

一种很小的片状半导体材料, 通常是硅材料, 它含有小型化电子电路.