硅堆
It is also necessary to do thermo-mechnical modeling of thermal through silicon via ( TTSV) and thin stack die ( including adhesive and interposer) and the impact on active devices and interconnect.
有必要进行热硅通孔和薄的堆叠晶片(包括粘结层或者中介层)的热-力建模及其对有源器件和互连线影响的研究。
A simplified 1/ 8 model, considering silicon dioxide and nitride process as well as stack anodic bonding and adhesive bonding processes, was developed.
这里研究了简化的1/8模型,模型考虑了二氧化硅和氮化硅生成过程及堆阳极键合和胶粘结合过程。
high voltage silicon stack for tv
电视机用高压硅堆
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